1984
DOI: 10.1109/tmtt.1984.1132847
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Effects of Doping Profile on GaAs, Double-Drift IMPATT Diodes at 33 and 44 GHz Using the Energy-Momentum Transport Model

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1984
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Cited by 7 publications
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“…We suppose that we can analyze the DAR diode structure on the basis of precise nonlinear drift-diffusion model of the IMPATT diode which had been developed for DDR type of IMPATT diode (Zemliak et al 1997;Zemliak & De La Cruz, 2002) and was used successfully for the active layer optimization of this type of the diode. Historically, many analytical and numerical models have been developed for the various operational modes of IMPATT diodes (Tager & Vald-Perlov, 1968;Scharfetter & Gummel, 1969;Zemliak, 1981;Kafka & Hess, 1981;El-Gabaly et al, 1984;Zemliak & Zinchenko, 1989;Dalle & Rolland, 1989;Zemliak & Roman, 1991;Vasilevskii, 1992;Stoiljkovic et al, 1992;Curow, 1994;Joshi et al, 1995;Tornblad et al, 1996;Zemliak et al, 1997). However, they are some problems with numerical scheme stability for any complex doping profile of IMPATT diode.…”
Section: Introductionmentioning
confidence: 99%
“…We suppose that we can analyze the DAR diode structure on the basis of precise nonlinear drift-diffusion model of the IMPATT diode which had been developed for DDR type of IMPATT diode (Zemliak et al 1997;Zemliak & De La Cruz, 2002) and was used successfully for the active layer optimization of this type of the diode. Historically, many analytical and numerical models have been developed for the various operational modes of IMPATT diodes (Tager & Vald-Perlov, 1968;Scharfetter & Gummel, 1969;Zemliak, 1981;Kafka & Hess, 1981;El-Gabaly et al, 1984;Zemliak & Zinchenko, 1989;Dalle & Rolland, 1989;Zemliak & Roman, 1991;Vasilevskii, 1992;Stoiljkovic et al, 1992;Curow, 1994;Joshi et al, 1995;Tornblad et al, 1996;Zemliak et al, 1997). However, they are some problems with numerical scheme stability for any complex doping profile of IMPATT diode.…”
Section: Introductionmentioning
confidence: 99%