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Silicon MOSFET technology using 1.5um gate lengths has demonstrated excellent performance for 9OOMHz applications.Circuit results for low noise amplifiers, power amplifiers, mixers, and oscillators using this technology will be discussed in comparison to other device technologies.Device results for 0.6um gate length devices showing the microwave performance of silicon MOS transistors are discussed. These results together with scaling predictions indicate that microwave silicon MOSFETs will play a major role in the 90s. Introduction:Activity in silicon MOS technologies for RF applications has been increasing due t o the needs for robust and low cost technologies for personal communication systems. Most of the activity in RF MOS has been in the power amplification areas where both vertical a lateral FETs have been used for multi Watt amplifiers at frequencies below 1GHz [1,2]. The work reported in this paper will concentrate on lateral devices where both source and drain are accessible from the front side of the silicon.This paper will demonstrate the RF capabilities of this technology beyond power amplifiers and will discuss the results of various RF functions found in a portable radio. This technology which is CMOS like in nature has demonstrated RF performance which is at par or better than Silicon Bipolar or GaAs MESFETs, thus opening up new exciting possibilities for mixed signal applications and higher levels of integration. Devices with 0.6um gate lengths show excellent microwave performance of both the N-and Pchannel devices, which opens new exciting RF complementary circuit solutions. This technology

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