Effects of dilution gas on characteristics of SiOC(H) films synthesized by atmospheric pressure plasma CVD

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO2 Using Trivinylmethoxysilane and Oxygen Plasma

“…Carbon contamination is usually found in SiO2 films prepared by CVD techniques, mainly originating from the organic nature of CVD precursors and uncompleted chemical reactions leading to SiO2 film formation. [57][58][59] But in our case, it is remarkable that neither Si-CHx nor Si-N groups are observed, even at deposition temperatures as low as RT and in open-air conditions. This means that all carbon species are efficiently removed during the APE-SCVD process thanks to the high reactivity of the close-proximity oxygen plasma.…”