Effects of different tunnel layers on retention characteristics for Pd-nanocrystal-based nonvolatile memory

Kang, Tsung-Kuei; Liao, Ta-Chuan; Liu, Han–Wen; Wang, Fang-Hsing; Wu, Wen−Fa

doi:10.1016/j.mee.2012.02.001

Cited by 2 publications

(5 citation statements)

References 18 publications

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“…The higher initial charge loss rate is observed from 0 to 1000 s, while a lower charge loss rate is observed from 1000 to 10 000 s. In our previous studies [24,41], we have concluded that the former region of charge loss curve is associated with charge loss from shallow traps (ST) in the Gd 2 O 3 -NC film, while the latter one is associated with charge loss from deep traps (DT) via a direct tunnelling to the interface state at the SiO 2 /Si interface. In addition, shallow-trap charge loss reportedly results from defect generation in the dielectric layer [42,43]. The charge loss rates of ST and DT can be obtained by linear fitting in the respective regions.…”

Section: Electrical Characteristics Of Fluorinated Gd 2 O 3 -Nc Flash...mentioning

confidence: 99%

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Huang¹,

Lin²,

Wang³

et al. 2012

Nanotechnology

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A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF(4)) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd(2)O(3)-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd(2)O(3)-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd(2)O(3)-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd(2)O(3)-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

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Section: Electrical Characteristics Of Fluorinated Gd 2 O 3 -Nc Flash...mentioning

confidence: 99%

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Huang¹,

Lin²,

Wang³

et al. 2012

Nanotechnology

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“…The shallow traps in the tunneling layer can be induced from Pd NCs and they play an important role in C-V hysteresis characteristic of the NVM device. [12][13] According to the energy band diagram in Fig. 1b low traps of the tunneling layer and shows a positive shift in C-V curve.…”

Section: Resultsmentioning

confidence: 95%

“…Therefore, to reduce the shallow traps induced by metal NCs was an important issue. 12 A high density of Pd NCs was easily formed on the Hf x Al y O z tunneling layer, so the NVM with Pd NCs storage layer was also studied. [12][13] Instead of SiO 2 , the Hf x Al y O z was served as the tunneling layer, the retention characteristic in Pd NCs NVM device was improved.…”

mentioning

confidence: 99%

“…12 A high density of Pd NCs was easily formed on the Hf x Al y O z tunneling layer, so the NVM with Pd NCs storage layer was also studied. [12][13] Instead of SiO 2 , the Hf x Al y O z was served as the tunneling layer, the retention characteristic in Pd NCs NVM device was improved. 12 However, the induced shallow traps in the Hf x Al y O z tunneling layer still affect the retention characteristics.…”

mentioning

confidence: 99%

“…[12][13] Instead of SiO 2 , the Hf x Al y O z was served as the tunneling layer, the retention characteristic in Pd NCs NVM device was improved. 12 However, the induced shallow traps in the Hf x Al y O z tunneling layer still affect the retention characteristics. In this paper, less shallow traps in the proposed Hf x Al y O z tunneling layer could be achieved by a simple timing technique.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique

Kang

Chen

Lin

et al. 2015

ECS Solid State Letters

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Effects of different tunnel layers on retention characteristics for Pd-nanocrystal-based nonvolatile memory

Cited by 2 publications

References 18 publications

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique

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