Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique

Nano-composite MOx materials for NVMs

“…Promising device results using metallic or semiconducting NCs involving HfO 2 or HfAlO dielectrics as tunnel and inter-poly oxides or as tunnel oxide only have been presented in [25,[30][31][32][33]. Nevertheless, the attainable programming times remain in the 10-100 ms range and long retention times for NVM applications have not been demonstrated yet.…”

“…alloys or Al 2 O 3 ) as tunnel oxide and/or inter-poly oxide is still active. Most of them concern metal NPs as Au [22,23], Ag [24] or Pd [25] or metal oxide NCs as Gd 2 O 3 [26], ZnO [27]. Finally, only a few recent papers concern Ge or Si quantum dots in metal oxide high-κ dielectrics for NVM [28,29].…”