Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

Huang, Kuo‐Ching; Fang, Yean–Kuen; Yaung, Dun–Nian; Chen, Chii-Wen; Liang, Mong–Song; Hsieh, J.C.; Su, Chi-Wen; Lee, Kuei-Ying

doi:10.1109/55.737566

Cited by 3 publications

(1 citation statement)

References 10 publications

(17 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the earlier reports of the use of tungsten silicide for integrated circuit applications, 1,2 there have been numerous reports of the use of this material for bipolar extrinsic base regions, 3 metal-oxide-semiconductor gate structures, 4 EEPROMs, 5 and related applications. 6 Stacks of polycrystalline silicon and silicide ͑polycides͒ have the benefit of having a lower resistivity than heavily doped polysilicon.…”

Section: Introductionmentioning

confidence: 99%

Stability of boron and phosphorus implanted tungsten silicide structures at high temperatures

Bashir

Hebert

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure Metal silicides synthesized by high current metal-ion implantation Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers J.We report on the stability of sputter-deposited tungsten silicide (WSi 2.6 ) films that were implanted with boron or phosphorus and annealed at high temperatures using rapid thermal annealing. Depending on process conditions, some films were found to be unstable, resulting in peeling and lifting from the substrate. The regime of stability was experimentally determined and found to be a function of the implant dose, species, and anneal temperature. Films implanted with boron were found to be more stable than those implanted with phosphorus. With the appropriate choice of dopant dose, anneal temperature, and capping layer type, the film stacks were found to be stable upon subsequent furnace annealing steps at 900°C.

show abstract

Section: Introductionmentioning

confidence: 99%

Stability of boron and phosphorus implanted tungsten silicide structures at high temperatures

Bashir

Hebert

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide

Huang

Fang

Yaung

et al. 1999

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Unitary and analytic ten-resonance model of the nucleon electromagnetic (e.m.) structure with canonical normalizations and QCD (up to the logarithmic correction) asymptotics is constructed on the four-sheeted Riemann surface, which provides a superposition of vector-meson pole and continuum contributions in a very natural way. As a result it describes simultaneously all existing experimental space-like and time-like data on the proton e.m. form factors (ff's) and on the neutron e.m. ff's as well. A crucial factor in the latter achievement is the inclusion of a contribution of the fourth excited state of the ρ(770) meson with the parameters m ρ = 2455 ± 53 MeV, ρ = 728 ± 2 MeV and f (1) ρ NN f ρ = 0.0549 ± 0.0005, f (2) ρ NN f ρ = −0.0103 ± 0.0001. The pronounced effect of the two-pion continuum on the isovector spectral functions demonstrating a strong enhancement of the left wing of the ρ(770) resonance close to two-pion threshold, which was revealed by Höhler and Pietarinen by means of the nucleon ff unitarity condition more than a quarter of the century ago, is predicted by the model automatically. The model gives large values of the f (1,2) φN N coupling constants, thus indicating the violation of the OZI rule. Since in the framework of the considered model isoscalar ff's above their lowest branch point t s 0 = 9m 2 π are complex functions, the isoscalar spectral function behaviours are predicted as well.

show abstract

Eliminating WSi _x peeling in a polycide process by an amorphization technique of ion implantation

Chen¹,

Shan

2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We propose a practical way to control WSix peeling in a polycide process by ion implantation of WSix. The WSix film stress decreases one to two orders of magnitude due to film amorphization by implantation. The implant steps in the polycide process can be used to alleviate the accumulation of the WSix film stress. By replacing diffusion with implantation for polygate doping and modifying topological layout design rule to prohibit unimplanted polygate, WSix peeling in a polycide process is completely eliminated.

show abstract

Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

Cited by 3 publications

References 10 publications

Stability of boron and phosphorus implanted tungsten silicide structures at high temperatures

Stability of boron and phosphorus implanted tungsten silicide structures at high temperatures

Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide

Eliminating WSi _x peeling in a polycide process by an amorphization technique of ion implantation

Contact Info

Product

Resources

About

Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

Cited by 3 publications

References 10 publications

Stability of boron and phosphorus implanted tungsten silicide structures at high temperatures

Stability of boron and phosphorus implanted tungsten silicide structures at high temperatures

Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide

Eliminating WSi x peeling in a polycide process by an amorphization technique of ion implantation

Contact Info

Product

Resources

About

Eliminating WSi _x peeling in a polycide process by an amorphization technique of ion implantation