Effects of different inhibitor on antioxidation of copper bonding wire at room temperature

He, Xiaokang; Guo, Lixin; Gaosen, Gong; Su, Fang; Zhu, Daoben

doi:10.1007/s10854-022-08042-x

Cited by 5 publications

(3 citation statements)

References 39 publications

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“…However, owing to the steep increase in Au price and its limited performance development in recent years, the market share of Au bonding wire is decreasing yearly [ 11 , 12 ]. Cu bonding wire, as an alternative wire, has a potential to provide good electrical connections for high-power and highly-integrated electronics because of its higher electrical and thermal conductivity and lower cost than Au [ 13 , 14 , 15 ]. However, since the Cu bonding wire has the properties of high hardness and oxidation rate and complex bonding process that will lead to damage of pad during bond, scholars agree that Cu bonding wire is not the ultimate candidate for Au bonding wire [ 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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Section: Introductionmentioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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“…As an alternative line, the Cu bonding wire has higher conductivity, thermal conductivity, and lower cost than Au and has good electrical connection potential in high power and high integration electronic devices [12][13][14][15][16][17]. Compared with Au wire, Cu wire has better electrothermal performance, higher pull force, and loop stability, allowing for thinner wires to fit a smaller pad size, and the growth rate of harmful intermetallics in Cu-Al is less than one-fifth of that in Au-Al, which greatly improves chip lifetime and reliability [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Study on Manufacturing Technology of Ultra-Thin/Narrow Bonding Cu Strip for Electronic Packaging

Cao

Zhang

et al. 2023

Micromachines

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The performance of rolling parameters and annealing processes on the microstructure and properties of Cu strip were studied by High Precision Rolling Mill, FIB, SEM, Strength Tester, and Resistivity Tester. The results show that with the increase of the reduction rate, coarse grains in the bonding Cu strip are gradually broken and refined, and the grains are flattened when the reduction rate is 80%. The tensile strength increased from 248.0 MPa to 425.5 MPa, while the elongation decreased from 8.50% to 0.91%. The growth of lattice defects and grain boundary density results in an approximately linear increase in resistivity. With the increase of annealing temperature to 400 °C, the Cu strip recovers, and the strength decreased from 456.66 MPa to 220.36 MPa while the elongation rose from 1.09% to 24.73%. The tensile strength and elongation decreased to 192.2 MPa and 20.68%, respectively, when the annealing temperature was 550 °C. The trend of yield strength of the Cu strip was basically the same as that of tensile strength. The resistivity of the Cu strip decreased rapidly during a 200~300 °C annealing temperature, then the trend slowed, and the minimum resistivity was 3.60 × 10−8 Ω·m. The optimum tension range annealing was 6–8 g; less or more than that will affect the quality of the Cu strip.

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“…However, due to the increasingly high cost of Au and its limited performance development in recent years, alternative bonding wires have been considered [ 6 , 7 , 8 , 9 ]. Cu bonding wire is a preferred alternative material because of its lower cost, slower intermetallic growth on Al pads, and higher thermal conductivity and mechanical strength compared with Au bonding wire [ 10 , 11 , 12 ]. However, researchers agree that Cu bonding wire is not the definitive substitute for Au bonding wire due to its high hardness and oxidation rate and complex bonding process that will result in pad damage during bonding [ 13 , 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

Effects of Process Parameters on Bond Properties of Ag-2.35Au-0.7Pd-0.2Pt-0.1Cu Alloy Wire

et al. 2023

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Bond properties were performed on Ag-2.35Au-0.7Pd-0.2Pt-0.1Cu alloy wire with a diameter of 25 µm under different process parameters. The effects of electrical flaming off (EFO) current and EFO time on the deformability of the free air ball (FAB) were investigated using scanning electron microscopy (SEM), as well as the effects of ultrasonic power and bonding force on the bond characteristic. The experimental results show that FAB grows from a preheated tip to a small ball, a regular ball, and finally to a golf ball with increasing either the EFO current or the EFO time, and the FAB presents an optimal shape at 25 mA and 650 μs. Moreover, a nonlinear relationship between FAB diameter and EFO time is obtained at an EFO current of 25 mA, which could be expressed by a cubic equation. Further, at a constant bonding force, as the ultrasonic power increased, the mashed ball diameter grew larger and larger, the capillary hole imprint became more and more obvious, and the tail width also increased, and vice versa. The optimal ultrasonic power and bonding force are 70 mW and 45 gf for ball bonding and 90 mW and 75 gf for wedge bonding, respectively. Finally, for all the bonded wire samples prepared under optimal process parameters, no ball and wedge bond lifts happened after the destructive pull test, and full intermetallic compound coverage with perfect morphology occurred on the bond pad after the ball shear test, which meant that the bonded wire samples had high bond strength and hence improved the reliability of microelectronic products. It provided technical support for the reliability research of Pt-containing Ag-based bonding alloy wires.

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Effects of different inhibitor on antioxidation of copper bonding wire at room temperature

Cited by 5 publications

References 39 publications

Research Progress on Bonding Wire for Microelectronic Packaging

Research Progress on Bonding Wire for Microelectronic Packaging

Study on Manufacturing Technology of Ultra-Thin/Narrow Bonding Cu Strip for Electronic Packaging

Effects of Process Parameters on Bond Properties of Ag-2.35Au-0.7Pd-0.2Pt-0.1Cu Alloy Wire

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