Effects of deposition method and conditions for IGZO film and thermal annealing on composite film quality, surface roughness, microstructural defects, and electrical properties of Ti/IGZO/graphene/polyimide specimens

Chang, Chang Shuo; Li, Tse Chang; Tsai, Yi Chan; Wu, Gien Huang; Lin, Jen Fin

doi:10.1016/j.jallcom.2018.07.252

Cited by 6 publications

(2 citation statements)

References 52 publications

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“…To obtain high-quality ITZO thin films, there are two sets of parameters in the fabrication: sputtering process and postdeposition process. Post-deposition treatments include postannealing [13][14][15], ionizing radiation [16], laser radiation plasma treatment [17], and ultraviolet radiation [18] etc. Among them, post-annealing treatment is a simple and effective method to improve the quality of thin films and devices.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

et al. 2021

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In this work, the electrical conductivity and optical transparency of the In-Sn-Zn-O (ITZO) films annealed at different temperatures were investigated. The results show that the ITZO films transformed from amorphous phase to crystalline phase after annealed in the air. The transmittance of the films improves significantly and all exceed 88%. Meanwhile, the annealed ITZO films exhibit a significant enhancement in conductivity. In particular, ITZO film annealed at 650 °C has high electrical conductivity (∼4.94×10 2 S cm −1 ) and an excellent figure of merit (∼5.94×10 −4 Ω −1 ). Moreover, ITZO thin film transistors were prepared and their performance was tested. After annealing, the high electrical properties of the active layer make the gate regulation ability of the thin film transistors degrade. The annealed films with excellent optoelectronic properties can be applied to transparent electrodes.

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Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

et al. 2021

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“…Figure a shows the O 1s peaks in the IGZO channel of nonprogrammed and programmed devices. The peaks at 530.7 eV assigned for lattice oxygen (O L ), 531.3 eV for oxygen vacancy (O V ), and 532.2 eV for surface impurity such as hydroxyl bond (O–H) are found in both devices. , However, the relative peak intensity of O V to O L is lower in the programmed device than in the nonprogrammed one. The reduced O V peak intensity in the IGZO channel of the programmed device by applying + V GS can be interpreted with the incorporation of Li + ions from the LiCoO x to IGZO channel.…”

Section: Resultsmentioning

confidence: 99%

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Jeong

Han

Noh

et al. 2023

ACS Appl. Electron. Mater.

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Write-once-read-many-times (WORM) memory characteristics with a large memory window are demonstrated in a thin-film transistor (TFT) composed of an indium-gallium-zinc oxide (IGZO) channel and a lithium-cobalt oxide (LiCoO x ) ion-supplying layer in the gate oxide. While the device with a thicker (5 nm) tunneling oxide showing a threshold voltage shift (ΔV T) of about 5 V by electron charging upon positive gate voltage (V GS) sweep to +25 V, the device with a 2 nm-thick tunneling oxide exhibits a large memory window with ΔV T > 20 V by Li-ion migration from LiCoO x to IGZO channel, which can be controlled as multilevel states with respect to the V GS amplitude. Incorporation of Li ions into the IGZO channel acting as p-type dopants reduces carrier concentration in the channel and consequently increases V T. The increased V T and the consequently reduced drain current are not instantly restored back by applying negative V GS, featuring WORM memory characteristics. Although the device undergoes partial retention loss, the retention remains up to about 90% after 100 min of retention time. These results verify WORM memory operations in the IGZO TFTs through gate voltage-driven Li-ion incorporation into the IGZO channel to modify its conductive states instead of using a typical electrical charging route.

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Study of the Electrical and Diffusion Barrier Properties in Ultrathin Carbon Film-Coated Copper Microwires for Interconnects

Chang

Wang

et al. 2019

J. of Materi Eng and Perform

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Effects of deposition method and conditions for IGZO film and thermal annealing on composite film quality, surface roughness, microstructural defects, and electrical properties of Ti/IGZO/graphene/polyimide specimens

Cited by 6 publications

References 52 publications

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Study of the Electrical and Diffusion Barrier Properties in Ultrathin Carbon Film-Coated Copper Microwires for Interconnects

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Effects of deposition method and conditions for IGZO film and thermal annealing on composite film quality, surface roughness, microstructural defects, and electrical properties of Ti/IGZO/graphene/polyimide specimens

Cited by 6 publications

References 52 publications

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

Study of the Electrical and Diffusion Barrier Properties in Ultrathin Carbon Film-Coated Copper Microwires for Interconnects

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Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO_x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor