Effects of Defects on the Mechanical Properties of Kinked Silicon Nanowires

Chen, Yun; Zhang, Cheng; Li, Liyi; Tuan, Chia-Chi; Chen, Xin; Gao, Jian; He, Yunbo; Wong, Ching‐Ping

doi:10.1186/s11671-017-1970-7

Cited by 14 publications

(9 citation statements)

References 30 publications

(33 reference statements)

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“…We note, however, that the structure of various non-linear (stepped, helical, etc.) nanowires that have been experimentally realized, 5, 34,35 have been found or theoretically argued to be either highly crystalilne 5,34 or large-defect dominated.…”

Section: Nanowire Geometry Effects: Initial Shape Crystalline Orientmentioning

confidence: 99%

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Kinetic Monte Carlo model of breakup of nanowires into chains of nanoparticles

Gorshkov

Privman

2017

Journal of Applied Physics

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A kinetic Monte Carlo approach is applied to studying shape instability of nanowires that results in their breaking up into chains of nanoparticles. Our approach can be used to explore dynamical features of the process that correspond to experimental findings, but that cannot be interpreted by continuum mechanisms reminiscent of the description of the Plateau-Rayleigh instability in liquid jets. For example, we observe long-lived dumbbell-type fragments and other typical non-liquid-jet characteristics of the process, as well as confirm the observed latticeorientation dependence of the breakup process of single-crystal nanowires. We provide snapshots of the process dynamics, and elaborate on the nanowire-end effects, as well as on the morphology of the resulting nanoparticles.

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Section: Nanowire Geometry Effects: Initial Shape Crystalline Orientmentioning

confidence: 99%

“…or theoretically argued to be either highly crystalilne 5,34 or large-defect dominated. 12,35 Therefore, we plan to explore such structure emergence of the former in the framework of the considered model in our future work.…”

Section: Nanowire Geometry Effects: Initial Shape Crystalline Orienta...mentioning

confidence: 99%

Kinetic Monte Carlo model of breakup of nanowires into chains of nanoparticles

Gorshkov

Privman

2017

Journal of Applied Physics

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“…Moreover, sometimes fundamentally different approaches are used, such as anisotropic etching of the substrate. 92 A more detailed description will be given in the next section.…”

Section: Information and Kinking Mechanismsmentioning

confidence: 99%

Kinking in Semiconductor Nanowires: A Review

Vlassov

Oras

Polyakov

et al. 2021

Crystal Growth & Design

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The growth direction of nanowires (NWs) can change during synthesis as a result of stochastic processes or modulation of certain growth conditions. This phenomenon is known as kinking. Although deviations from a uniform vertical growth are typically considered to be undesirable, kinking opens a route for additional tweaking of the characteristics and functionalities of NWs in a controllable manner, thus extending the range of potential applications. In the present Review, we give an insight into the kinking mechanisms and summarize the most crucial factors that can lead to kinking of NWs during synthesis. Additionally, the properties and applications of kinked NWs are discussed.

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“…This kind of defect is not only related to the formation of other forms of defects, but also controls the diffusion of interstitial atoms in semiconductors. At the same time, the existence of the vacancies provides greater possibilities for material deformation [ 31 ]. Therefore, it has always attracted attention from experimental and theoretical researchers [ 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

2021

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The effect of vacancy defects on the structure and mechanical properties of semiconductor silicon materials is of great significance to the development of novel microelectronic materials and the processes of semiconductor sensors. In this paper, molecular dynamics is used to simulate the atomic packing structure, local stress evolution and mechanical properties of a perfect lattice and silicon crystal with a single vacancy defect on heating. In addition, their influences on the change in Young’s modulus are also analyzed. The atomic simulations show that in the lower temperature range, the existence of vacancy defects reduces the Young’s modulus of the silicon lattice. With the increase in temperature, the local stress distribution of the atoms in the lattice changes due to the migration of the vacancy. At high temperatures, the Young’s modulus of the silicon lattice changes in anisotropic patterns. For the lattice with the vacancy, when the temperature is higher than 1500 K, the number and degree of distortion in the lattice increase significantly, the obvious single vacancy and its adjacent atoms contracting inward structure disappears and the defects in the lattice present complex patterns. By applying uniaxial tensile force, it can be found that the temperature has a significant effect on the elasticity–plasticity behaviors of the Si lattice with the vacancy.

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Effects of Defects on the Mechanical Properties of Kinked Silicon Nanowires

Cited by 14 publications

References 30 publications

Kinetic Monte Carlo model of breakup of nanowires into chains of nanoparticles

Kinetic Monte Carlo model of breakup of nanowires into chains of nanoparticles

Kinking in Semiconductor Nanowires: A Review

Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

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