Effects of Cu incorporation as an acceptor on the thermoelectric transport properties of Cu Bi2Te2.7Se0.3 compounds

Jeong, Mahn; Tak, Jang-Yeul; Lee, Soonil; Seo, Won‐Seon; Cho, Hyung Koun; Lim, Young Soo

doi:10.1016/j.jallcom.2016.11.257

Cited by 19 publications

(3 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be ascribed to the improvement of PF and the reduced thermal conductivity ( κ total ) after annealing. For annealed sample with x = .004, the largest ZT value of 1.06 is obtained at 373 K, an increase of 28% in comparison with the Cu‐doping sample synthesized by spark plasma sintering ( ZT max is .83) 24 . Meanwhile, the temperature of the ZT max increases compared with the traditional commercial sample synthesized by zone‐melting 25 .…”

Section: Resultsmentioning

confidence: 91%

“…For annealed sample with x = .004, the largest ZT value of 1.06 is obtained at 373 K, an increase of 28% in comparison with the Cu-doping sample synthesized by spark plasma sintering (ZT max is .83). 24 Meanwhile, the temperature of the ZT max increases compared with the traditional commercial sample synthesized by zone-melting. 25 Furthermore, it is worthwhile to note that this annealed sample possesses a ZT value larger than .8 when the temperature is higher than 323 K. Therefore, the above results suggest that the TE performance can be significantly improved through annealing.…”

Section: F I G U R Ementioning

confidence: 99%

See 1 more Smart Citation

High thermoelectric performance of (Bi_1‐_xPr_x)₂(Te_0.9Se_0.1)₃ alloys prepared by high‐pressure sintering method

Zou

Liu

2021

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

In this article, n‐type (Bi1‐xPrx)2(Te0.9Se0.1)3 (x = 0, .002, .004, .008) alloys were fabricated by high‐pressure sintering (HPS) method together with annealing. The effect of high pressure and Pr contents on the microstructure and thermoelectric performance of samples were explored in detail. The results show that the HPS samples are composed of nanoparticles. Pr doping has significant impacts on the electrical and thermal transport properties of the Bi2Te2.7Se0.3 alloys. The HPS sample with x = .004 shows the maximum ZT value of .31 at 473 K, which is enhanced by 41% to compare with the Pr‐free sample. Annealing can improve the thermoelectric properties by increasing the electrical transport properties and decreasing the thermal conductivity simultaneously. As a result, the highest ZT value of 1.06 is achieved for the annealed sample with x = .004 at 373 K, which is beneficial to the thermoelectric power generation.

show abstract

Section: Resultsmentioning

confidence: 91%

Section: F I G U R Ementioning

confidence: 99%

High thermoelectric performance of (Bi_1‐_xPr_x)₂(Te_0.9Se_0.1)₃ alloys prepared by high‐pressure sintering method

Zou

Liu

2021

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

show abstract

“…The wider the band gap, the more difficult it is for the carriers to jump over the forbidden band, which leads to a decrease in carrier concentration and electrical conductivity [38,39]. On the one hand, excess Mg enters vacancies, weakening the acceptor effect, which could reduce the number of hole carriers [40]. On the other hand, according to the band gap testing results, the widening of the band gap results in a decrease in the number of current carriers passing through the band gap, which also reduces the number of hole carriers.…”

Section: Resultsmentioning

confidence: 99%

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Yang,

Wang,

Zhao

et al. 2023

Micromachines

View full text Add to dashboard Cite

Thermoelectric materials are widely used in refrigeration chips, thermal power generation, catalysis and other fields. Mg3Bi2-based thermoelectric material is one of the most promising thermoelectric materials. Herein, the Mg3Bi2-based samples were prepared by high temperature synthesis, and the influence of Mg/Sb content on the electrical transport properties and semi-conductivity/semi-metallicity of the materials has been studied. The results indicate that the efficiency of introducing electrons from excess Mg prepared by high temperature synthesis is lower than that introduced by ball milling, due to the high vapor pressure of Mg. The doping of Sb/Te at the Bi site would make it easier for the material to change from p-type conduction to n-type conduction. With the increase in Mg content, the semi-conductivity of the material becomes weaker, the semi-metallicity becomes stronger, and the corresponding conductivity increases. With the increase in Sb content, the samples exhibit the opposite changes. The highest power factor of ~1.98 mWm−1K−2 is obtained from the Mg3.55Bi1.27Sb0.7Te0.03 sample.

show abstract

Realizing High Thermoelectric Performance in n‐Type Se‐Free Bi₂Te₃ Materials by Spontaneous Incorporation of FeTe₂ Nanoinclusions

Rahman

Nam

Jung

et al. 2023

Energy & Environ Materials

Self Cite

View full text Add to dashboard Cite

Bi2Te3‐based materials have drawn much attention from the thermoelectric community due to their excellent thermoelectric performance near room temperature. However, the stability of existing n‐type Bi2(Te,Se)3 materials is still low due to the evaporation energy of Se (37.70 kJ mol−1) being much lower than that of Te (52.55 kJ mol−1). The evaporated Se from the material causes problems in interconnects of the module while degrading the efficiency. Here, we have developed a new approach for the high‐performance and stable n‐type Se‐free Bi2Te3‐based materials by maximizing the electronic transport while suppressing the phonon transport, at the same time. Spontaneously generated FeTe2 nanoinclusions within the matrix during the melt‐spinning and subsequent spark plasma sintering is the key to simultaneous engineering of the power factor and lattice thermal conductivity. The nanoinclusions change the fermi level of the matrix while intensifying the phonon scattering via nanoparticles. With a fine‐tuning of the fermi level with Cu doping in the n‐type Bi2Te3–0.02FeTe2, a high power factor of ~41 × 10−4 Wm−1 K−2 with an average zT of 1.01 at the temperature range 300–470 K are achieved, which are comparable to those obtained in n‐type Bi2(Te,Se)3 materials. The proposed approach enables the fabrication of high‐performance n‐type Bi2Te3‐based materials without having to include volatile Se element, which guarantees the stability of the material. Consequently, widespread application of thermoelectric devices utilizing the n‐type Bi2Te3‐based materials will become possible.

show abstract

Effects of Cu incorporation as an acceptor on the thermoelectric transport properties of Cu Bi2Te2.7Se0.3 compounds

Cited by 19 publications

References 20 publications

High thermoelectric performance of (Bi_1‐_xPr_x)₂(Te_0.9Se_0.1)₃ alloys prepared by high‐pressure sintering method

High thermoelectric performance of (Bi_1‐_xPr_x)₂(Te_0.9Se_0.1)₃ alloys prepared by high‐pressure sintering method

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Realizing High Thermoelectric Performance in n‐Type Se‐Free Bi₂Te₃ Materials by Spontaneous Incorporation of FeTe₂ Nanoinclusions

Contact Info

Product

Resources

About

Effects of Cu incorporation as an acceptor on the thermoelectric transport properties of Cu Bi2Te2.7Se0.3 compounds

Cited by 19 publications

References 20 publications

High thermoelectric performance of (Bi1‐xPrx)2(Te0.9Se0.1)3 alloys prepared by high‐pressure sintering method

High thermoelectric performance of (Bi1‐xPrx)2(Te0.9Se0.1)3 alloys prepared by high‐pressure sintering method

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Realizing High Thermoelectric Performance in n‐Type Se‐Free Bi2Te3 Materials by Spontaneous Incorporation of FeTe2 Nanoinclusions

Contact Info

Product

Resources

About

High thermoelectric performance of (Bi_1‐_xPr_x)₂(Te_0.9Se_0.1)₃ alloys prepared by high‐pressure sintering method

High thermoelectric performance of (Bi_1‐_xPr_x)₂(Te_0.9Se_0.1)₃ alloys prepared by high‐pressure sintering method

Realizing High Thermoelectric Performance in n‐Type Se‐Free Bi₂Te₃ Materials by Spontaneous Incorporation of FeTe₂ Nanoinclusions