To develop highly efficient thermoelectric materials, the generation of homogeneous heterostructures in a matrix is considered to mitigate the interdependency of the thermoelectric compartments. In this study, Cu2Te nanoparticles were introduced onto Bi2Te2.7Se0.3 n-type materials and their thermoelectric properties were investigated in terms of the amount of Cu2Te nanoparticles. A homogeneous dispersion of Cu2Te nanoparticles was obtained up to 0.4 wt.% Cu2Te, whereas the Cu2Te nanoparticles tended to agglomerate with each other at greater than 0.6 wt.% Cu2Te. The highest power factor was obtained under the optimal dispersion conditions (0.4 wt.% Cu2Te incorporation), which was considered to originate from the potential barrier on the interface between Cu2Te and Bi2Te2.7Se0.3. The Cu2Te incorporation also reduced the lattice thermal conductivity, and the dimensionless figure of merit ZT was increased to 0.75 at 374 K for 0.4 wt.% Cu2Te incorporation compared with that of 0.65 at 425 K for pristine Bi2Te2.7Se0.3. This approach could also be an effective means of controlling the temperature dependence of ZT, which could be modulated against target applications.

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Bi2Te3‐based materials have drawn much attention from the thermoelectric community due to their excellent thermoelectric performance near room temperature. However, the stability of existing n‐type Bi2(Te,Se)3 materials is still low due to the evaporation energy of Se (37.70 kJ mol−1) being much lower than that of Te (52.55 kJ mol−1). The evaporated Se from the material causes problems in interconnects of the module while degrading the efficiency. Here, we have developed a new approach for the high‐performance and stable n‐type Se‐free Bi2Te3‐based materials by maximizing the electronic transport while suppressing the phonon transport, at the same time. Spontaneously generated FeTe2 nanoinclusions within the matrix during the melt‐spinning and subsequent spark plasma sintering is the key to simultaneous engineering of the power factor and lattice thermal conductivity. The nanoinclusions change the fermi level of the matrix while intensifying the phonon scattering via nanoparticles. With a fine‐tuning of the fermi level with Cu doping in the n‐type Bi2Te3–0.02FeTe2, a high power factor of ~41 × 10−4 Wm−1 K−2 with an average zT of 1.01 at the temperature range 300–470 K are achieved, which are comparable to those obtained in n‐type Bi2(Te,Se)3 materials. The proposed approach enables the fabrication of high‐performance n‐type Bi2Te3‐based materials without having to include volatile Se element, which guarantees the stability of the material. Consequently, widespread application of thermoelectric devices utilizing the n‐type Bi2Te3‐based materials will become possible.