Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure

Abstract

Structural effects, especially corner angle of upper-corners of trapezoidal and rectangular, and triangular cross-sectional shapes of silicon nanowire field-effect transistors on effective carrier mobility and normalized inversion charge density have been investigated. <100>-directed silicon nanowire field-effect transistors with semi-gate around structure fabricated on (100)-oriented silicon-on-insulator wafers were evaluated. As the upper-corner angle decreased from obtuse to acute angle, we observed an increased amount of inversion charge using split-CV measurement. On the other hand, the effective carrier mobility dependence on the upper-corner angle seems to have an optimized point near 100 o at 296 K. Although normalized inversion charge density was the largest with acute angles, effective carrier mobility with acute upper-corner angle was severely degraded.Considering the intrinsic delay time of SiNW FET, SiNW FETs with trapezoidal cross-section with upper-corner angle of 100 o is more suitable in this work to achieve high electrical performance. We believe these findings could represent guidelines for the design of high-performance SiNW FETs.

A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor

“…However, the values are visibly higher when measured along the u1 and u3 directions as compared to 𝑢 2 . This is due to the corner effect [20], which is a consequence of the strong electric field in the corners of the nanowire. Near these corners, the top gate TG and the bottom gate BG become very close (see dash circles in the cross-sectional view of Figure 8(d)) and can be viewed as a double-gate MOSFET structure.…”

A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

“…In contrast to the VLS and EBL methods, SiNWs-FET sensors fabricated by WETO method have remarkable advantages such as the controllability of the whole process and the capability of wholesale manufacture [ 21 ]. Additionally, the cross-sections of the SiNWs fabricated by these three methods are circular, square and triangular, respectively, which seriously affects the performance of devices [ 22 , 23 , 24 , 25 , 26 , 27 ]. Here, we compared the sensitivity of the SiNWs-FET sensor fabricated by our WETO method with the others by theoretical analysis and software simulations.…”

A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application

“…Studies on nanowire channels with different geometry, based on basic material parameters of GaN, have shown that MOSFET with triangular-shaped nanowire channel exhibits better performances [21], [22]. However, nanowire MOSFET geometries like triangular and hexagonal usually suffer from large gate leakage current (I G ) due to high gate electric field at the sharp corners [23]- [25].…”