Effects of constant-voltage stress on the stability of Parylene-C columnar microfibrous thin films

Khawaji, Ibrahim H.; Awadelkarim, Osama O.; Lakhtakia, Akhlesh

doi:10.1109/tdei.2018.007561

Cited by 5 publications

(5 citation statements)

References 25 publications

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“…The leakage current in figure 4(b) is about 200 µA at V stress = 20 V and t = 11 s, while the I stress in figure 5(a) is about 266 µA at V g = 19.75 V. The value of the leakage current in figure 4(b) is higher because the MIS capacitor is under CVS. Therefore, the leakage current is expected to decay as the stress time increases until a steady-state value that equals to the leakage current in figure 5(a) [5].…”

Section: Time-dependent Dielectric-breakdown Characterization After A...mentioning

confidence: 99%

“…Parylene C is commonly used as a dielectric material for electronic applications [1,[3][4][5][6][7][8][9]. Pinholefree films of this polymer function well as protection layers [10] to minimize device degradation caused by exposure to air and moisture.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, this polymer has been used for flexible substrates due to its desirable mechanical properties (yield strength of 55.1 MPa and static Young's modulus of 2.76 GPa) and the ease of deposition in both micrometerand nanometer-thickness regimes [11]. In addition, we have recently shown that Parylene-C columnar microfibrous thin films are viable candidates for use as interlayer dielectrics [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

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Charge Buildup and Leakage Current in Gold/Parylene-C/ Pentacene Capacitor under Constant-Voltage Stress

Khawaji

Brigeman

Awadelkarim

et al. 2020

Flex. Print. Electron.

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Degradation of metal-insulator-semiconductor (MIS) capacitors of gold/Parylene-C/Pentacene under constant voltage stress (CVS) was investigated to explore the electrical stability and reliability of Parylene C as a gate dielectric in flexible electronics. A stress voltage of fixed magnitude as high as 20 V, both negative and positive in polarity, was applied to each MIS capacitor at room temperature for a fixed duration as long as 10 s. The CVS effects on the capacitance-voltage curve-shift, the time-dependent leakage current and the time-dependent dielectric breakdown were measured and analyzed. CVS is observed to induce charge in Parylene-C and its interfaces with gold and Pentacene. The net induced charge is positive and negative for, respectively, negative and positive gate bias polarity during CVS. The magnitude of the charge accumulated following positive gate CVS is significantly higher than that following negative gate bias CVS in the range of 4 to 25 nC cm −2 . In contrast, the leakage current during the negative gate stress is three orders of magnitude higher than that during the positive gate stress for the same bias stress magnitude. The charge buildup and leakage current are due to the trapping of electrons and holes near the Parylene-C/Pentacene interface as well as in the Parylene-C layer.Before the application of the CVS, a dielectric breakdown occurs at an electric field of 1.62 MV cm −1 . After the application of the CVS, the breakdown voltage decreases and the density of the trapped charges increases as the stress voltage increases in magnitude, with the polarity of the trapped charges opposite to that of the stress voltage. The magnitude and direction of the capacitance-voltage curve-shift depend on the trapping and recombination of electrons and holes in the Parylene-C layer and in the proximity of the Parylene-C/Pentacene interface during CVS.

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Section: Time-dependent Dielectric-breakdown Characterization After A...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Charge Buildup and Leakage Current in Gold/Parylene-C/ Pentacene Capacitor under Constant-Voltage Stress

Khawaji

Brigeman

Awadelkarim

et al. 2020

Flex. Print. Electron.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Parylene C is commonly used as a dielectric material for electronic applications [1,3,4,5,6,7,8,9]. Pinhole-free films of this polymer function well as protection layers [10] to minimize device degradation caused by exposure to air and moisture.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, this polymer has been used for flexible substrates due to its desirable mechanical properties (yield strength of 55.1 MPa and static Young's modulus of 2.76 GPa) and the ease of deposition in both micrometer-and nanometer-thickness regimes [11]. In addition, we have recently shown that Parylene-C columnar microfibrous thin films are viable candidates for use as interlayer dielectrics [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Gold/Parylene-C/Pentacene Capacitor under Constant-Voltage Stress

Khawaji¹,

Brigeman²,

Awadelkarim³

et al. 2019

Preprint

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Degradation of metal-insulator-semiconductor (MIS) capacitors of gold/Parylene-C/Pentacene under constant voltage stress (CVS) was investigated to explore the electrical stability and reliability of Parylene C as a gate dielectric in flexible electronics. A stress voltage of fixed magnitude as high as 20 V, both negative and positive in polarity, was applied to each MIS capacitor at room temperature for a fixed duration as long as 10 s. The CVS effects on the capacitance-voltage curve-shift, the time-dependent leakage current, and the time-dependent dielectric breakdown were measured and analyzed. CVS is observed to induce charge in Parylene-C and its interfaces with gold and Pentacene. The net induced charge is positive and negative for, respectively, negative and positive gate bias polarity during CVS. The magnitude of the charge accumulated following positive gate CVS is significantly higher than that following negative gate bias CVS in the range of 4 to 25 nC cm −2 . In contrast, the leakage current during the negative gate stress is three orders of magnitude higher than that during the positive gate stress for the same bias stress magnitude. The charge buildup and leakage current are due to the trapping of electrons and holes near the Parylene-C/Pentacene interface as well as in the Parylene-C layer. Before the application of the CVS, a dielectric breakdown occurs at an electric field of 1.62 MV cm −1 . After the application of the CVS, the breakdown voltage decreases and the density of the trapped charges increases as the stress voltage increases in magnitude, with the polarity of the trapped charges opposite to that of the stress voltage. The magnitude and direction of the capacitancevoltage curve-shift depend on the trapping and recombination of electrons and holes in the Parylene-C layer and in the proximity of the Parylene-C/Pentacene interface during CVS.

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Porous fluorinated polyarylene ether nitrile as ultralow permittivity dielectrics used under humid environment

et al. 2021

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Effects of constant-voltage stress on the stability of Parylene-C columnar microfibrous thin films

Cited by 5 publications

References 25 publications

Charge Buildup and Leakage Current in Gold/Parylene-C/ Pentacene Capacitor under Constant-Voltage Stress

Charge Buildup and Leakage Current in Gold/Parylene-C/ Pentacene Capacitor under Constant-Voltage Stress

Gold/Parylene-C/Pentacene Capacitor under Constant-Voltage Stress

Porous fluorinated polyarylene ether nitrile as ultralow permittivity dielectrics used under humid environment

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