Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

Cho, Edward Namkyu; Kang, Jung Han; Yun, Ilgu

doi:10.1016/j.microrel.2011.07.018

Cited by 51 publications

(39 citation statements)

References 16 publications

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“…DV th0 increases from 3.64 V to 4.9 V as the channel length decreases. The s value decreases from 9043 s to 4760 s as channel length decreases which is consistent with an increase of the charge trapping rate, because the smaller s causes the faster charge trapping time [19].…”

Section: Gs+ Stress At Various Channel Lengthssupporting

confidence: 72%

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Park

Cho

Yun

2012

Microelectronics Reliability

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Section: Gs+ Stress At Various Channel Lengthssupporting

confidence: 72%

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Park

Cho

Yun

2012

Microelectronics Reliability

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“…Amorphous oxide transistors have exhibited improvement of electrical characteristics and negative shift of threshold voltage (and turn-on voltage) according to the increase of carrier concentration unlike the Si-based TFTs. 16,17 Therefore, the turn-on voltages of ZTO and SZTO TFTs have been controlled by changing channel thickness. The inverter consisting of all n-type transistors can be implemented by adopting different V on of ZTO and SZTO TFTs.…”

Section: -13mentioning

confidence: 99%

High performance of full swing logic inverter using all n-types amorphous ZnSnO and SiZnSnO thin film transistors

Han

Lee

2015

Applied Physics Letters

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A high performance inverter consisting of amorphous zinc-tin-oxide (a-ZTO) thin film transistor (TFT) with enhancement mode and amorphous silicon-zinc-tin-oxide (a-SZTO) TFT with depletion mode has been fabricated by using only n-type metal-oxide thin film transistors. The turn on voltages of ZTO and SZTO TFTs showed positive value of 1.17 V and negative value of −5 V, respectively. High voltage gain of about 25 has been obtained by using implemented inverter with good switching characteristics even with all n-type thin film transistors.

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“…For the display technology, the trend has always been toward high compactness, which necessitates the understanding of how the activelayer thickness affects TFT performance. In this regard, recent reports on a-IGZO TFTs have stressed the importance of the a-IGZO layer thickness in TFT operation [2], [3] and stability [4]. Barquinha et al reported operation characteristics of thin a-IGZO TFTs and observed deterioration in performance of TFTs with 5-nm-thick a-IGZO layers [2].…”

Section: Introductionmentioning

confidence: 99%

Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure

Mativenga

Geng

Chang

et al. 2012

IEEE Electron Device Lett.

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Stable and fast-switching thin-film transistors and circuits incorporating 5-nm-thick amorphous-InGaZnO (a-IGZO) active layers are demonstrated, and their dependence on channel length is studied. Turn-on voltage shifts in the positive gate voltage direction as the channel length increases. A low area density of defects in the bulk a-IGZO, which is ultrathin, results in good stability under positive bias stress, whereas interdiffusion of electrons/electron donors from the highly doped source and drain regions to the channel edges results in the dependence of turn-on voltage on channel length. Stable operation of an 11-stage ring oscillator is achieved with a propagation delay time of ∼97 μs/stage due to reduced gate-to-drain overlap capacitance and parasitic resistances. Index Terms-Amorphous InGaZnO (a-IGZO), inverter, ring oscillator, thin-film transistor (TFT), ultrathin.

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Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

Cited by 51 publications

References 16 publications

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

High performance of full swing logic inverter using all n-types amorphous ZnSnO and SiZnSnO thin film transistors

Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure

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