Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate

by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10 −8 Ω·cm 2 , which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10 −6 Ω·cm 2 . The current-voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

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“…3(a). The major peaks can be indexed to the NiGe crystalline structure and NiGe (111), (210), (211) peaks are clearly visible 29 . Fig.…”

Section: Resultsmentioning

confidence: 99%

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Babu

Lee

Song

et al. 2020

Sci Rep

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“…reducing the in-plane dimension of the contact [46,47], removing the crystalline template from the substrate through pre-amorphisation implant [48,49,50] or by alternating the available thermal budget during deposition [51,52] and annealing [53,54]. The current study therefore indicates that modern experimental techniques can further understand binary and ternary solid-phase reactions.…”

Section: Influence Of Alloying On Phase Formationmentioning

confidence: 86%

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Geenen

Solano

Jordan-Sweet

et al. 2018

Journal of Applied Physics

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The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases, and their preferential orientation with respect to the Si(001) substrate, for both 'thin' (i.e. 9 nm) and 'ultra-thin' (i.e. 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides' properties, additives of Al, Co and Pt are also included in this study. Our results show that the first silicide formed is epitaxial θ-Ni 2 Si , regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. The observed textures of sequential silicides

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“…An additional motivation for the use of C co‐implantation is the fact that it leads to a more stable nickel germanide and may induce dopant segregation at the metal/semiconductor interface . This is advantageous to lower the contact resistivity, by the combined reduction of the Schottky barrier height and the enhanced tunneling through the narrower depletion region (higher field) induced by the higher active doping density.…”

Section: Co‐dopingmentioning

confidence: 99%

Defect engineering for shallow n‐type junctions in germanium: Facts and fiction

Simoen

Schaekers

Liu

et al. 2016

Physica Status Solidi (a)

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An overview is given on the status of n‐type dopant activation and diffusion in Ge, based on a standard ion implantation and annealing scheme. Emphasis is on defect engineering approaches to optimize either or both parameters. A detailed discussion is given on the use of co‐implantation by neutral or other n‐type dopants. As a case study, the impact of the C ion implantation energy and dose on n‐type junctions in p‐Ge by P + C co‐implantation will be given. It is demonstrated that for fixed P implant conditions, there exist an optimum energy and dose for achieving a minimum junction depth by the formation of C–PV complexes. An alternative approach is the use of self‐interstitial management at the end‐of‐range of the P implantation. Finally, an overview is given of alternatives for obtaining shallow, highly activated n‐type junctions in Ge. They rely on: non‐standard implantation schemes, ultra‐short annealing methods or relying on in situ doped epitaxial deposition.

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Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate

Cited by 11 publications

References 48 publications

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Defect engineering for shallow n‐type junctions in germanium: Facts and fiction

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