Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

Hanawa, Hideyuki; Satoh, Yoshiki; Horio, K.

doi:10.1016/j.mee.2015.04.064

Cited by 9 publications

(5 citation statements)

References 20 publications

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“…Calculated drain output characteristics for ε r = 7 and ε r = 30 are essentially similar, as shown in Ref. 19. The drain currents for ε r = 30 become a little lower because the effective gate length becomes longer due to the extended depletion region at the drain side of the gate.…”

supporting

confidence: 71%

Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

Kawada

Hanawa

Horio³

2017

Jpn. J. Appl. Phys.

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We analyze off-state breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a Fe-doped buffer layer where a deep acceptor located above the midgap is included. It is shown that by introducing a high-k passivation layer, the breakdown voltage Vbr improves as in a case with an undoped semi-insulating buffer layer. In the Fe-doped case, Vbr becomes a little higher in the case where the passivation layer’s relative permittivity εr is rather higher when the energy levels determining the Fermi level are set equal in the two buffers. It is also shown that when the energy level of deep acceptor is deeper, Vbr becomes higher in the region where εr is high. This occurs because the leakage current via the buffer layer becomes smaller.

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supporting

confidence: 71%

Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

Kawada

Hanawa

Horio³

2017

Jpn. J. Appl. Phys.

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“…In the case of N DA = 2 × 10 17 and 3 × 10 17 cm −3 , the breakdown voltages become much higher than that for N DA = 10 17 cm −3 when ε r becomes higher than 30. This is because the buffer leakage currents become smaller for N DA = 2×10 17 and 3×10 17 cm −3 and the breakdown voltages become determined by the impact ionization of carriers. In the case of ε r = 60, the breakdown voltage reaches about 500 V, which corresponds to an average electric field of about 3.3 MV/cm between the gate and the drain.…”

Section: Effects Of Acceptor Densitymentioning

confidence: 99%

“…It was shown that the breakdown voltage increased as ε r increased because the electric field at the drain edge of gate was reduced. It is also shown that when the gate voltage is more negative, the breakdown voltage is improved in the high ε r region because the buffer leakage current is reduced [17].…”

mentioning

confidence: 99%

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura

Ueda

Kawada

et al. 2018

IEEE Trans. Electron Devices

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We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer, and the results are compared with those having a normal SiN passivation layer. As a result, it is found that the breakdown voltage is enhanced particularly in the cases with relatively short field plates because the reduction in the electric field at the drain edge of gate effectively improves the breakdown voltage in the case with the high-k passivation layer. In the case with the moderate-length field plate, the enhancement of breakdown voltage due to the high-k passivation layer occurs because the electric field profiles between the field-plate edge and the drain become more uniform. It is also studied how the breakdown voltage depends on a deep-acceptor density in the Fe-doped semiinsulating buffer layer when a high-k passivation layer is used. It is shown that the breakdown voltage increases with increasing the relative permittivity of the passivation layer ε r and with increasing the deep-acceptor density N DA . When ε r = 60 and N DA = 2-3 × 10 17 cm −3 at the gate length of 0.3 μm, the breakdown voltage becomes about 500 V at a gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of about 3.3 MV/cm between the gate and the drain. Index Terms-2-D analysis, breakdown characteristics, buffer layer, GaN HEMT, high-k passivation layer. I. INTRODUCTION N OWADAYS, AlGaN/GaN HEMTs are attractive for applications to high-power microwave devices and highpower switching devices [1], [2]. It is well known that introducing a field plate enhances the power performance of AlGaN/GaN HEMTs as well as GaAs FETs [3]-[5]. This occurs because by introducing a field plate, the current collapse is reduced [6], [7], and the breakdown voltage increases [8]-[10]. The increase in breakdown voltage occurs because the electric field at the drain edge of gate is reduced by introducing a field plate.

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“…The source‐drain leakage/buffer leakage determines the breakdown of the devices and gives a qualitative idea of the buffer structure. [ 28 ] The increased buffer leakage also leads to observed electroluminescence. [ 29 ] Very few reports have mentioned the drain/buffer leakage post thermal stress and most importantly its elastic recovery.…”

Section: Introductionmentioning

confidence: 99%

Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test

Mukherjee

Chaubey

Rawal

et al. 2022

Physica Status Solidi (a)

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The effect of the thermal storage test on GaN high electron mobility transistor (HEMT) is investigated in this study by observing off‐state drain leakage current and on‐state hysteresis and maximum transconductance. The recovery post thermal stress is also observed which points to native defects within the heterostructure as the leakage values after 72 hrs of recovery are measured to be one order higher than the pristine device. On‐state hysteresis recovery and off‐state drain leakage are dominated by similar defects as observed from the characteristic recovery times. Trap analysis through drain current spectroscopy reveals an additional trap level of EC – 0.83 eV from the thermal storage test. The electrical measurements are in close correlation with the E2normalH Raman active mode leading to reduced lifetimes (≈0.44 ps) at higher temperatures, where anharmonic phonon decay is observed following the reported Balkanski model. This gives an overall picture of the phonon‐induced defect generation from the thermal stress and the recovery from the reduced scattering probability within the material observed after 72 hrs recovery; also observed within the HEMTs from electrical characterization.

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Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

Cited by 9 publications

References 20 publications

Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test

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