Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Satoh, Yoshiki; Hanawa, Hideyuki; Horio, K.

doi:10.1109/eumic.2016.7777560

Cited by 2 publications

(1 citation statement)

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“…2) The high-voltage-drain induced leakage current will inevitably introduce severe trapping in the passivation/AlGaN interfaces, resulting in large dynamic R ds,on . [7][8][9][10][11] In another aspect, due to the requirement of the fail-safe operation for the power system, a normally off channel is adopted in the GaN power HEMT, in which the PGaN technology is the mainstream technology because of its high uniform threshold voltage across the whole wafer, and it has been proven in the mass production of power adaptors for consumer electronics. [3,4,[12][13][14][15] Therefore, to obtain high-performance enhancementmode GaN HEMT, it is of great importance to suppress the reverse blocking leakage current in the PGaN GaN HEMT device.…”

Section: Introductionmentioning

confidence: 99%

Suppression of Reverse Leakage in Enhancement‐Mode GaN High‐Electron‐Mobility Transistor by Extended PGaN Technology

Dai

Jiang

et al. 2023

Physica Status Solidi (a)

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An extended PGaN structure is proposed and successfully adopted on a Schottky PGaN enhancement‐mode GaN high‐electron‐mobility transistor (HEMT) platform. The device features a drain saturation current of 256 mA mm−1, a threshold voltage of +1.8 V, and an ON resistance of 19.781 Ω mm. It is found that using the PGaN extension structure on both HEMTs and circle Schottky barrier diodes (SBDs) efficiently reduces leakage current across a wide temperature range (from −55 °C to 150 °C). Furthermore, multifrequency CV measurements of interdigitated SBDs are employed to assess the extension structure's dynamic responsiveness.

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