“…The further increase in B content which resulted in the decrease in hardness after the attainment of the maximum hardness value of the film can be attributed to the increase in volume fraction of the amorphous BN phase (≤6 GPa). The presence of thickened amorphous phase in the grain led to the loss of the ideal interaction between the crystallites, and the amorphous phase [30] hence the hardness of the film is dominated by the low hardness amorphous BN phase [31].…”
Titanium boron nitride (Ti-B-N) films with various boron contents were deposited using titanium and boron targets in a reactive magnetron sputtering system. The boron content in the film was varied from 0 at.-% to 8.7 at.-%, to evaluate its properties. Various analytical techniques such as X-ray diffraction, high-resolution electron microscopy, nanoindentation and ball-on-disk dry sliding etc. were used. Incorporation of B into the film influenced the microstructure, mechanical and room-temperature tribological properties. At a B content of 0.2 at.-%, the film exhibited the highest hardness of ∼27 GPa. It also presented the lowest wear rate of ∼2.9 × 10 −7 mm 3 N −1 mm −1 . However, there was a gradual decrease in coefficient of friction (CoF) values of the film when the B content was increased, with a minimum of 0.2 attained at 8.7 at.-% boron. The increased volume fraction of amorphous boron nitride phase contributed to the decrease in coefficient of friction.
“…The further increase in B content which resulted in the decrease in hardness after the attainment of the maximum hardness value of the film can be attributed to the increase in volume fraction of the amorphous BN phase (≤6 GPa). The presence of thickened amorphous phase in the grain led to the loss of the ideal interaction between the crystallites, and the amorphous phase [30] hence the hardness of the film is dominated by the low hardness amorphous BN phase [31].…”
Titanium boron nitride (Ti-B-N) films with various boron contents were deposited using titanium and boron targets in a reactive magnetron sputtering system. The boron content in the film was varied from 0 at.-% to 8.7 at.-%, to evaluate its properties. Various analytical techniques such as X-ray diffraction, high-resolution electron microscopy, nanoindentation and ball-on-disk dry sliding etc. were used. Incorporation of B into the film influenced the microstructure, mechanical and room-temperature tribological properties. At a B content of 0.2 at.-%, the film exhibited the highest hardness of ∼27 GPa. It also presented the lowest wear rate of ∼2.9 × 10 −7 mm 3 N −1 mm −1 . However, there was a gradual decrease in coefficient of friction (CoF) values of the film when the B content was increased, with a minimum of 0.2 attained at 8.7 at.-% boron. The increased volume fraction of amorphous boron nitride phase contributed to the decrease in coefficient of friction.
“…1,2 CrN films also show high anticorrosion and antioxidation behaviours under harsh environmental condition. 3,4 Moreover, various ternary Cr–X–N (X = Ti, Al, Si and B) films 5–8 have been explored in order to increase the properties of the CrN films through evolution of those microstructures.…”
Quaternary Cr-V-C-N films were deposited on Si wafers through a hybrid system of arc ion plating and sputtering techniques in an Ar/N 2 /CH 4 gaseous mixture. In this work, the effects of vanadium on the microstructural evolution, mechanical properties and friction mechanism of Cr-V-C-N films were investigated. The results showed that quaternary Cr-V-C-N films consisted of nanosized crystallites of (Cr,V)(C,N) and amorphous VCN phases. The Cr-10?4 at-%V-C-N film possessed the higher hardness value of 34 GPa, compared to the 27 GPa of a Cr(C,N) film. Additionally, the friction coefficients of the Cr-V-C-N films were reduced from 0?38 for the Cr-C-N film to 0?27 for the Cr-10?4 at-%V-C-N film. Atomic force microscopy (AFM) and Auger electron spectroscopy (AES) analyses also revealed that the amorphous phase VCN phases played a role in reducing the friction coefficients of the films. The a-VCN phase (vanadium rich) was believed to cause a tribochemical reaction with ambient air during the wear process.
“…The batch A (ZrBSiTa) samples exhibited high δ values of 24.0%, 22.6%, 24.2%, and 19.6%, significant and negative ∆H mix values of −48, −58, −65, and −66 kJ/mol, and medium mixing entropy values of 8.6, 10.7, 11.3, and 10.7 J/K.mol for Zr 21 B 30 Ta 49 (A1), Zr 20 B 24 Si 13 Ta 43 (A2), Zr 18 B 29 Si 21 Ta 32 (A3), and Zr 15 B 15 Si 42 Ta 28 (A4), respectively, which resulted in forming amorphous structures. Moreover, sputtered BN [28,29] and SiN x films tended to be amorphous, which resulted in the formation of amorphous structures for the (ZrBSiTa)N x films. Figure 2 displays the XPS spectra and curve fitting of Zr 3d, B 1s, Si 2p, and Ta 4f for the batch A samples at a sputter depth of 49.2 nm.…”
Section: Chemical Compositions and Phase Structures Of Zrbsita And (Z...mentioning
confidence: 99%
“…However, TM diborides are inherently hard but brittle, accompanied by crack formation during deformation [27]. Moreover, BN tends to form amorphous structures, as reported in sputtered Ti-B-N [28], Cr-B-N [29], and Zr-B-N [30] films. Combining the characteristics of TM-Si-N and TM-B-N films applied as protective coatings is essential.…”
In this study, ZrBSiTa and (ZrBSiTa)Nx films were deposited on silicon wafers through direct current magnetron cosputtering. The nitrogen flow ratio (RN2) of the reactive gas and the sputter power applied to the Si target (PSi) were the variables in the fabricating processes. The influence of the N and Si contents on the mechanical properties, thermal stability, and oxidation behavior of the ZrBSiTa and (ZrBSiTa)Nx films were investigated. All the as-fabricated films exhibited amorphous structures. The RN2 set at 0.1, 0.2, and 0.4 caused the ZrBSiTaNx films to exhibit high N contents of 52–55, 62–64, and 63–64 at.%, respectively. The Si content of the ZrBSiTa films increased from 0 to 42 at.% as PSi increased from 0 to 150 W, and this was accompanied by decreases in hardness and Young’s modulus values from 19.1 to 14.3 GPa and 264 to 242 GPa, respectively. In contrast, the increase in Si content of the (ZrBSiTa)Nx films from 0 to 21 at.% increased the hardness from 11.5 to 14.0 GPa, and Young’s modulus from 207 to 218 GPa. Amorphous BN and SiNx phases in the (ZrBSiTa)Nx films varied the structural and mechanical properties. The thermal stability of the (ZrBSiTa)Nx films was evaluated by annealing at 800–900 °C for 10–30 min in Ar. The oxidation behavior of the (ZrBSiTa)Nx films was evaluated in the ambient air at 800 °C for 0.5–24 h. The amorphous (ZrBSiTa)Nx films with a high Si content had high thermal stability and oxidation resistance.
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