Effects of Background Gases on the Homogeneous Nucleation of Vapors. 1

Heist, Richard H.; Ahmed, Junaid; Janjua, M. B. I.

doi:10.1021/j100067a035

Cited by 79 publications

(106 citation statements)

References 13 publications

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“…Thus, this approach can be used to study the carrier-gas effects on vapor-liquid nucleation. 32 In the future, we will use this approach to examine theoretical works on carrier-gas effects. For example, Kashchiev 33 found that the second mixed virial coefficient of the gas mixture as well as the second virial coefficient of the carrier gas play important factors in accessing the carrier-gas effects.…”

Section: Discussionmentioning

confidence: 99%

Formation free energy of clusters in vapor-liquid nucleation: A Monte Carlo simulation study

Zeng

1999

The Journal of Chemical Physics

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The formation free energy of clusters in a supersaturated vapor is obtained by a constrained Monte Carlo technique. A key feature of this approach is to set an upper limit to the size of cluster. This maximum cluster size serves essentially as an extra thermodynamic variable that constrains the system. As a result, clusters larger than the critical cluster of nucleation in the supersaturated vapor can no longer grow beyond the limiting size. Like changing the overall density of the system, changing the maximum cluster size also results in a different supersaturation and thereby a different formation free energy. However, at the same supersaturation and temperature it is found that the formation free energy has a unique value, independent of the upper limit of cluster size. The predicted size of critical cluster of nucleation is found to be consistent with the nucleation theorem as well as previous results using different simulation approaches.

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Section: Discussionmentioning

confidence: 99%

Formation free energy of clusters in vapor-liquid nucleation: A Monte Carlo simulation study

Zeng

1999

The Journal of Chemical Physics

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“…In diffusion cloudchamber experiments, [1][2][3][4][5] for example, marked effects of carrier-gas pressure on the rate of nucleation and the critical supersaturation were seen. For a water/nitrogen system, however, a recent experiment 6 using a high pressure pulseexpansion wave tube demonstrated that when the nucleation rate is plotted as a function of conventional supersaturation ͑i.e., the ratio of the partial vapor pressure of the supersaturated vapor to the equilibrium vapor pressure of the pure component͒, the carrier-gas pressure effect is hardly discernible.…”

Section: Introductionmentioning

confidence: 99%

Effect of carrier-gas pressure on barrier to nucleation: Monte Carlo simulation of water/nitrogen system

Zeng

2001

The Journal of Chemical Physics

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Carrier gases are used in most nucleation experiments for releasing the latent heat generated during vapor condensation. In the analysis of experimental data it is often assumed that the carrier gas is inert and would not participate in the nucleation process of the target gas. Several recent nucleation experiments show that the influence of carrier gases to nucleation rate is not negligible under certain conditions. To gain more insight into the carrier-gas effect, we carry out Monte Carlo simulation to compute the free energy of formation of water clusters in the presence of a nitrogen carrier gas. At fixed temperature ͑240 K͒ and chemical potential, it is found that the barrier height to nucleation increases with the carrier-gas pressure. This barrier enhancement is attributed to the increase of equilibrium vapor pressure of water in the presence of carrier gas, which results in a decrease of supersaturation. It is also found that the simulation results are consistent with the binary-nucleation theorem.

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“…Therefore, methane essentially cannot be considered as an inert carrier gas, as was done so far in experimental studies on the effect of carrier gas pressure on nucleation. [3][4][5] In this paper we present experimental nucleation rates at pressures up to 40 bar, at 240 K in the supercritical region of n-nonane/ methane.…”

Section: Introductionmentioning

confidence: 99%