1997
DOI: 10.1016/s0040-6090(97)00339-8
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Effects of argon and oxygen addition to the CH4-H2 feed gas on diamond synthesis by microwave plasma enhanced chemical vapor deposition

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Cited by 29 publications
(12 citation statements)
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“…Concerning the deposition of carbon, we observe a transition from a chemistry dominated by CH 3 when methane is used, to one governed by C 2 when highly diluted methane in argon is employed. This finding is coherent with recent experimental observations indicating that high fractions of argon in H 2 /Ar/CH 4 plasmas result in an increase in the C 2 concentration [20,21]. While the role of the methyl radical as a growth specie is known, only recently C 2 has been suggested as a precursor of diamond-like films in CH 4 /Ar and C 60 /Ar plasmas [3,8,22].…”
Section: Resultssupporting
confidence: 90%
“…Concerning the deposition of carbon, we observe a transition from a chemistry dominated by CH 3 when methane is used, to one governed by C 2 when highly diluted methane in argon is employed. This finding is coherent with recent experimental observations indicating that high fractions of argon in H 2 /Ar/CH 4 plasmas result in an increase in the C 2 concentration [20,21]. While the role of the methyl radical as a growth specie is known, only recently C 2 has been suggested as a precursor of diamond-like films in CH 4 /Ar and C 60 /Ar plasmas [3,8,22].…”
Section: Resultssupporting
confidence: 90%
“…Microwave (MW) plasma-enhanced chemical vapor deposition (PE CVD) is a favored route for growing diamond films from gas mixtures comprising hydrogen and a small amount of a hydrocarbon precursor (typically methane). 1−4 Adding Ar to the CH 4 /H 2 plasma has variously been reported to influence the film growth rate, 5,6 its surface morphology, and the average crystallite size. 7−9 Synthesis of (ultra)nanocrystalline diamond films has even been reported from MW-activated gas mixtures involving just CH 4 and Ar as process gases.…”
Section: Introductionmentioning
confidence: 99%
“…In this study we focus our attention to oxygen impurity in diamond. Previous investigations showed [1][2][3][4] that addition of oxygen precursors in the diamond chemical vapor deposition (CVD) synthesis process improves the growth speed and the quality of diamond. The formation of diamond from carbon and hydrogen precursors in the presence of oxygen occurs when the number of oxygen and carbon atoms is about the same according to the C, H, O phase diagram 5 .…”
Section: Introductionmentioning
confidence: 99%
“…It has been not yet understood whether these ESR and PL centers have no common origin or they have common origin but the spinpolarization effect in OV center is negligible for other reasons. The other oxygen-related OVH ESR center has S = 1/2 spin state with a characteristic 1 H hyperfine signal of A || =±13.6(1) MHz, A ⊥ =∓9.0(1) MHz and gtensor of g || =2.0034(1), g ⊥ =2.0029 (1) 7 . This ESR center was very analogous with the negatively charged NVH(−) ESR center 15 , thus it was proposed that the OVH ESR center should originate from the neutral OVH(0) defect because these two defects are isovalent.…”
Section: Introductionmentioning
confidence: 99%
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