Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study

Zhu, Jiajun; Li, W. W.; Li, Y. W.; Shen, Yaning; Hu, Zhigao; Chu, Junhao

doi:10.1063/1.3518493

Cited by 9 publications

(1 citation statement)

References 25 publications

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“…Figure 1 b shows the XRD patterns of the LNO films with varying La:Ni ratios at an oxygen partial pressure fraction of 25%. Diffraction peaks corresponding to the (100), (110), (200), (210), and (200) crystallographic planes of the LNO structure are observed for the films with a La:Ni ratio of 1:0.98; however, peaks of the La 2 O 3 and NiO structures are not detected [ 48 , 49 ]. In contrast, LNO and La 2 O 3 crystalline phases with (100) plane are observed in the diffraction pattern of the films when the La:Ni ratio is 1:0.68, corresponding to Ni-deficient LNO.…”

Section: Resultsmentioning

confidence: 99%

Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO3−x) Thin Films

et al. 2023

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The resistive random-access memory (RRAM) with multi-level storage capability has been considered one of the most promising emerging devices to mimic synaptic behavior and accelerate analog computations. In this study, we investigated the reset-first bipolar resistive switching (RS) and multi-level characteristics of a LaNiO3−x thin film deposited using a reactive magnetron co-sputtering method. Polycrystalline phases of LaNiO3 (LNO), without La2O3 and NiO phases, were observed at similar fractions of Ni and La at a constant partial pressure of oxygen. The relative chemical proportions of Ni3+ and Ni2+ ions in LaNiO3−x indicated that it was an oxygen-deficient LaNiO3−x thin film, exhibiting RS behavior, compared to LNO without Ni2+ ions. The TiN/LaNiO3−x/Pt devices exhibited gradual resistance changes under various DC/AC voltage sweeps and consecutive pulse modes. The nonlinearity values of the conductance, measured via constant-pulse programming, were 0.15 for potentiation and 0.35 for depression, indicating the potential of the as-fabricated devices as analog computing devices. The LaNiO3−x-based device could reach multi-level states without an electroforming step and is a promising candidate for state-of-the-art RS memory and synaptic devices for neuromorphic computing.

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Section: Resultsmentioning

confidence: 99%

Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO3−x) Thin Films

et al. 2023

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Effect of Strain on the Physical Properties of Lanthanum Nickelate

Misra¹,

Kundu²,

Ankit³

2016

TMS 2016: 145^thAnnual Meeting &Amp; Exhibition: Supplemental Proceedings

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Lanthanum nickelate (LaNiO 3 ) is a promising material for stable fuel-cell electrode, optoelectronic and magneto-electronic devices. Density functional theory (DFT) based calculations were carried out to investigate the effect of strain on the physical properties of the correlated metal LaNiO 3 . Electronic structure, optical conductivity and temperature variation of resistivity have been studied in detail using GGA+U approach. It has been observed that LaNiO 3 under strain is more metallic compared to the unstrained system. However LaNiO 3 under compressive strain is found to be more metallic than that under tensile strain. Electron localization function calculation revealed that LaNiO 3 under tensile strain has more covalent bonding than that under compressive strain, which results in an increase in resistivity for the system under tensile strain. The theoretical understanding of the alternation of physical properties of the system, caused by misfit strain may help in the application of the system in different device purposes using strain engineering.

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