2012
DOI: 10.7567/jjap.51.10nc12
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Effects of Antimony Doping in Polycrystalline CdTe Thin-Film Solar Cells

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Cited by 10 publications
(14 citation statements)
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“…The CdTe solar cells were fabricated by the method reported in previous papers. [25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] For evaluation of the γ-ray tolerance, γ-ray irradiation was divided into multiple time-frames. γ irradiations were provided at the 60 Co γ-ray irradiation facility at Institute for Integrated Radiation and Nuclear Science, Kyoto University.…”
Section: Methodsmentioning
confidence: 99%
“…The CdTe solar cells were fabricated by the method reported in previous papers. [25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] For evaluation of the γ-ray tolerance, γ-ray irradiation was divided into multiple time-frames. γ irradiations were provided at the 60 Co γ-ray irradiation facility at Institute for Integrated Radiation and Nuclear Science, Kyoto University.…”
Section: Methodsmentioning
confidence: 99%
“…The CdTe solar cells were fabricated by the method reported in previous papers. [14][15][16][17][18][19][20] The active area of the CdTe solar cells was 3 © 8 mm 2 . The carbon back electrodes were prepared by screen printing.…”
Section: Methodsmentioning
confidence: 99%
“…13) In CdTe solar cells, a carbon electrode is widely used as a back contact, because it has a large work function of approximately 5 eV, which is required for ohmic contact to p-CdTe layers. [1][2][3][14][15][16][17][18][19][20] However, the carbon electrode has relatively high resistivity. CdTe solar cells have high series resistance compared with other solar cells such as Si-based and copper indium gallium diselenide (CIGS)-based solar cells.…”
Section: Introductionmentioning
confidence: 99%
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“…For this reason, in recent times extrinsic doping of CdTe has been one of the most challenging topics. CdTe can be doped in both p and n-type configuration; for p-type group I and V elements are used [102][103][104].…”
Section: Increasing the Net Charge Density: Dopingmentioning
confidence: 99%