Effects of annealing on low dielectric constant carbon doped silicon oxide films

Rusli, E.; Wang, M.R.; Wong, Terence Kin Shun; Yu, Mingbin; Li, C.Y.

doi:10.1016/j.diamond.2005.08.036

Cited by 9 publications

(4 citation statements)

References 15 publications

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“…Plasmapolymerized ethylcyclohexane thin lms were thermally stable up to 300 C, with no signicant shrinkage in the thickness and a shrinkage of below 3 % after annealing at 200 and 300 C. However, a more obvious thickness shrinkage of 10.2 % was observed for annealing at 500 C, a result of the annealing promoting a degassing of internal and terminal CH x [14]. The thickness decreased dramatically when annealed at higher temperatures (over 500 C) as a result of the signicant thermal decomposition and the collapse of nano-voids or nano-pores in the lms [15].…”

Section: Methodsmentioning

confidence: 98%

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Cho¹,

Bae²,

Boo³

et al. 2008

J. Korean Phy. Soc.

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Plasma-polymer pure ethylcyclohexane thin lms were deposited on Si(100) substrates at room temperature by using PECVD (plasma enhanced chemical vapor deposition). Hydrogen and argon gases were used as precursor bubbler and carrier gases, respectively. We also investigated the electrical and the physical properties of the plasma-polymer thin lms at various deposition RF powers and annealing temperatures. The as-grown and the annealed plasma-polymer thin lms were analyzed by using FT-IR (Fourier transform infrared spectroscopy) and SEM (scanning electron microscopy). The IR spectra showed that the plasma-polymer thin lms had totally dierent chemical functionalities from those of the ethylcyclohexane precursor and that the chemical functionalities of the thin lms changed with the RF power and annealing temperature. From the SEM results, we determined the thicknesses of the thin lms before and after the annealing, with the thickness shrinkage (%) being measured by using SEM cross-sectional images. An impedance analyzer was used to measure the capacitance and from the electrical property measurements, the lowest dielectric constant obtained was 1.71.

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Section: Methodsmentioning

confidence: 98%

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Cho¹,

Bae²,

Boo³

et al. 2008

J. Korean Phy. Soc.

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“…Due to the positive shift of V FB with the increase of porosity, which is related to the transformation of the closed network of individual pores into the open one, [21] the increase of closed Si-O-Si cage leads to the negative shift of V FB . During the back-end processing of the line (BEL) in integrated circuits, the highest processing temperature for the BEL structure is around 400-450 • C. [26] The thermal impact may also make influence on the C-V characteristic of SiCOH low-k films. Therefore, the C-V characteristics of annealed F-doping SiCOH films (at 400 • C for 4 h in vacuum) are obtained, as shown in Fig.…”

Section: -3mentioning

confidence: 99%

Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure

叶超¹,

宁兆元²

2010

Chinese Phys. B

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This paper investigates the capacitance–voltage (C–V) characteristics of F doping SiCOH low dielectric constant films metal–insulator–semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. With the CHF3/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C–V curves and the increase of flat-band voltage VFB from −6.1 V to 32.2 V are obtained. The excursion of C–V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF3/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0 V.

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“…[3][4][5][6][7][8] Methods of reducing the dielectric constant of materials can be divided into two main methods: (1) reducing the density of materials by introducing a porous structure into the material; [9][10][11][12] (2) reducing the polarizability of materials, generally by introducing lower polarizability bonds. [13][14][15][16][17] Conventional applications in interlayer materials are inorganic materials and organic polymer-based low-κ materials. 18 As a representative low-κ dielectric, SiO 2 has an advantage in terms of stability, but has large polarizability due to its silicon chemical bond, making it difficult to further decrease its dielectric constant to lower than 1.5.…”

Section: Introductionmentioning

confidence: 99%

Increasing porosity in hydrogen-bonded organic frameworks for low-κinterlayer dielectric

Song¹,

Zhu²,

Liu³

et al. 2023

Inorg. Chem. Front.

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Effects of annealing on low dielectric constant carbon doped silicon oxide films

Cited by 9 publications

References 15 publications

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure

Increasing porosity in hydrogen-bonded organic frameworks for low-κinterlayer dielectric

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