Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors

Mai, Jiaying; Tang, Naiwei; He, Waner; Zou, Zhengmiao; Luo, Chunlai; Zhang, Aihua; Fan, Zhen; Wu, Sujuan; Zeng, Min; Gao, Jinwei; Zhou, Guofu; Lu, Xubing; Liu, Jun‐Min

doi:10.1186/s11671-019-3007-x

Cited by 12 publications

(16 citation statements)

References 27 publications

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“…For mapping the spatial distribution of TCNQ molecules, the following vibrational modes at 1212, 1460, and 1607 cm –1 can be used, which belong to CCH bending, C–CN stretching, and CC ring stretching, respectively . However, the first two overlap with the C8-BTBT-C8 vibrational modes at 1208 and 1472 cm –1 , while only the vibrational mode at 1607 cm –1 has no overlap with any of the C8-BTBT-C8 vibrational modes. , For this reason, the peak intensity at 1607 cm –1 was used to map the spatial distribution of TCNQ shown in Figure a. The well-defined horizontal stripes indicate regions of increased TCNQ concentration in agreement with the POM images (Figure ).…”

Section: Resultsmentioning

confidence: 57%

“…28 However, the first two overlap with the C8-BTBT-C8 vibrational modes at 1208 and 1472 cm −1 , while only the vibrational mode at 1607 cm −1 has no overlap with any of the C8-BTBT-C8 vibrational modes. 29,30 For this reason, the peak intensity at 1607 cm −1 was used to map the spatial distribution of TCNQ shown in Figure 6a. The well-defined horizontal stripes indicate regions of increased TCNQ concentration in agreement with the POM images (Figure 5).…”

Section: Growth Morphology Andmentioning

confidence: 99%

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Directional Crystallization from the Melt of an Organic p-Type and n-Type Semiconductor Blend

Liu

Dunn

et al. 2021

Crystal Growth & Design

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Directional crystallization from the melt has been used as a tool to grow parallel crystalline stripes of p-and n-type molecular semiconductors. To start, the phase behavior of 2,7dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT-C8): tetracyanoquinodimethane (TCNQ) blends (molar ratio from 20:1 to 1:1) has been investigated by variable-temperature X-ray diffraction, differential scanning calorimetry, and polarized optical microscopy. The partial charge transfer between the C8-BTBT-C8 donor and the TCNQ acceptor as a function of temperature has been studied. Blends of 10:1 and 20:1 have been selected for directional crystallization because they show similar thermotropic and phase behavior comparable to that of pure C8-BTBT-C8. Directional crystallization results suggest that moderate cooling rates (6 and 12 °C min −1 ) leads to a digitated growth mode that gives rise to parallel crystalline stripes of C8-BTBT-C8 and C8-BTBT-C8-TCNQ charge-transfer complexes (C8-BTBT-C8-TCNQ CT), as confirmed by confocal Raman imaging. X-ray diffraction reveals high preferential orientation and good in-plane alignment for both C8-BTBT-C8 and C8-BTBT-C8-TCNQ CT crystallites.

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Section: Resultsmentioning

confidence: 57%

Section: Growth Morphology Andmentioning

confidence: 99%

Directional Crystallization from the Melt of an Organic p-Type and n-Type Semiconductor Blend

Liu

Dunn

et al. 2021

Crystal Growth & Design

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“…All of the compounds, except 3,4,5-F3Ph, exhibited either p-type or n-type field-effect mobility. Compounds m-CF3Ph and p-CF3Ph were the only materials that operated as n-type, but as expected did not produce a field-effect when tested in air, likely due to suppression of n-type behaviour in air [24], [25]. The electron mobility, µavg,e of p-CF3Ph was three orders of magnitude greater than that of m-CF3Ph.…”

Section: Otft Performancesupporting

confidence: 54%

“…Environmental stability and operating conditions are also important considerations that affect overall device performance and longevity, but are commonly overlooked when studying OTFT performance. Both p-and n-type OSC devices have been shown to be strongly affected by environmental factors such as temperature, light, humidity exposure and atmosphere (ambient, inert and vacuum) [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Developing and Comparing 2,6-Anthracene Derivatives: Optical, Electrochemical, Thermal, and Their Use in Organic Thin Film Transistors

et al. 2020

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Anthracene-based semiconductors have attracted great interest due to their molecular planarity, ambient and thermal stability, tunable frontier molecular orbitals and strong intermolecular interactions that can lead to good device field-effect transistor performance. In this study, we report the synthesis of six anthracene derivatives which were di-substituted at the 2,6-positions, their optical, electrochemical and thermal properties, and their single crystal structures. It was found that 2,6-functionalization with various fluorinated phenyl derivatives led to negligible changes in the optical behaviour while influencing the electrochemical properties. Furthermore, the choice of fluorinated phenyl moiety had noticeable effects on melting point and thermal stability (ΔTm < 55 °C and ΔTd < 65 °C). Bottom-gate top-contact (BGTC) organic thin transistors (OTFTs) were fabricated and characterized using the 2,6-anthracene derivatives as the semiconducting layer. The addition of fluorine groups on the phenyl groups led to a transition from p-type behaviour to n-type behaviour in BGBC OTFTs.

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“…Air stability is one of the most important issues for meeting the requirements in practical applications [17][18][19][20][21]. In previous studies, organic materials affected by air environment have been widely studied [22,23]. It has been reported that for gate dielectric materials with active functional groups, such as hydroxyl groups, the interaction with the adsorbed water in air would affect the device performance [24,25], leading to performance degradation in air [26,27].…”

Section: Introductionmentioning

confidence: 99%

The effect of air exposure on device performance of flexible C8-BTBT organic thin-film transistors with hygroscopic insulators

Xie

Liu

et al. 2020

Sci. China Mater.

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Organic thin film transistors (OTFTs) are normally sensitive to ambient conditions and show performance degradation in air. On the contrary, the performance of flexible 2,7-dioctyl[1] benzothieno [3,2-b][1]benzothiophene (C8-BTBT) OTFTs using cross-linked polymer layer, poly(4vinyl-phenol)-4,4'-(hexafluoroisopropylidene) diphthalic anhydride (PVP-HDA), as the dielectric layer can be improved in air conditions with 40% relative humidity. Under soaking in air with 40% relative humidity, the electrical behavior, surface morphology, and contact angle of the flexible C8-BTBT OTFTs using PVP-HAD as dielectric layer with three different thicknesses were investigated. It is found that, when the devices with 375 nm-thick PVP-HDA films are placed in 40% relative humidity air conditions for 6 h, the corrected average mobility (µ) can increase from 3.2 to 5.1 cm 2 V −1 s −1. Furthermore, the average threshold voltage (V th) changes from −12.4 to −9.3 V while keeping a constant ratio of I on /I off = 10 4. These results indicate that the flexible C8-BTBT OTFTs with PVP-HDA dielectric layer exhibit interesting application prospects.

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Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors

Cited by 12 publications

References 27 publications

Directional Crystallization from the Melt of an Organic p-Type and n-Type Semiconductor Blend

Directional Crystallization from the Melt of an Organic p-Type and n-Type Semiconductor Blend

Developing and Comparing 2,6-Anthracene Derivatives: Optical, Electrochemical, Thermal, and Their Use in Organic Thin Film Transistors

The effect of air exposure on device performance of flexible C8-BTBT organic thin-film transistors with hygroscopic insulators

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