Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition

Liu, Han-Yin; Chang, Chin Sung; Hsu, Pei-Huang; Chen, Wei‐Ting; Chang, Tengyuan; Lee, Ching-Sung; Shih, Shun-Cheng; Hsu, Wei-Chou

doi:10.1109/ted.2021.3074107

Cited by 4 publications

(3 citation statements)

References 29 publications

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“…There is no significant change in the crystal structure of SnO 2 in air and nitrogen environments. [ 12 ] The average crystalline size was found to be 31 nm. The values so obtained are given in Table 1 .…”

Section: Results and Analysismentioning

confidence: 99%

“…Liu et al. [ 12 ] recently studied the effects of ambient/carrier gas on amorphous InGaZnO‐based thin‐film transistors using ultrasonic spray pyrolysis deposition. Thus, the present study is to investigate the structural, optical, and electrical properties of the SnO 2 thin films deposited by spray pyrolysis with different ambient conditions by using different carrier gas.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Carrier Gas on Spray Pyrolysis Deposited SnO₂ Thin Films

Katariya

Singh²,

Saxena

et al. 2023

Macromolecular Symposia

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Nanostructured SnO2 thin films are synthesized by the chemical Spray pyrolysis method in presence of air and nitrogen as carrier gas. The study has emphasized on the impact of carrier gas on the underlying, electrical, and optical properties of the deposited thin films. XRD studies uncover that there is no variation in the crystalline structure of the film. The SnO2 thin films prepared using nitrogen as carrier gas is found more conductive as compared to the film prepared using air as a carrier gas. The change in conductivity is due to the increased oxygen deficiency in the nitrogen atmosphere. The HBM and EMA models are used to calculate particle radius by optical absorption data, showing the particle diameter is low for nitrogen as compared to air as carrier gas. The activation energy is also found to decrease in presence of nitrogen as carrier gas. This may be due to shallow donor and deep acceptor levels of semiconductors. The decrease in particle size increases the number of surface atoms, responsible for a decrease in activation energy of films.

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Section: Results and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Carrier Gas on Spray Pyrolysis Deposited SnO₂ Thin Films

Katariya

Singh²,

Saxena

et al. 2023

Macromolecular Symposia

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“…A 10 nm thick SiN layer were grown in situ together with the epitaxial structure by using the low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. During the device fabrication, 20 nm thick Al 2 O 3 was deposited as the gate oxide by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) [8][9][10] technique. A control Schottky-gate HFET was fabricated upon the same epitaxial structure.…”

mentioning

confidence: 99%

Investigations on Al₂O₃-Dielectric Wide-Gap Al_0.3Ga_0.7N Channel MOS-HFETs with Composite Al₂O₃/In Situ SiN Passivation

Lee¹,

Lee²,

Hsu³

et al. 2022

ECS J. Solid State Sci. Technol.

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3/in-situ SiN passivation and Al2O3 gate dielectric were investigated. 20 nm thick high-k Al2O3 was deposited using a non-vacuum ultrasonic spray pyrolysis deposition method. Comparative studies between an in-situ SiN-passivated Schottky-gate HFET (sample A) and a composite Al2O3/SiN-passivated MOS-HFET were made. Electrical and deep-UV sensing characteristics for devices with different gate-drain separations (LGD) of 6 and 14 μm were also studied. Improved device performance has been obtained for the present sample B (A) with LGD = 6/14 μm separately, including maximum drain-source current density (IDS, max) of 634.4/463.1 (421.8/301.1) mA/mm, maximum extrinsic transconductance (gm, max) of 25.2/17.9 (19.1/15.2) mS/mm, on/off-current ratio (Ion/Ioff) of 7.4 × 107/5.4 × 107 (4.5 × 105/5.4 × 104), two-terminal off-state gate-drain breakdown voltage (BVGD) of -420/-480 (-320/-390) V, and three-terminal on-state drain-source breakdown voltage of 310/380 (220/300) V at 300 K. Superior spectral responsivity of 885.6 A/W under 250-nm deep-UV radiation has also been achieved for the present MOS-HFET.

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Investigation of oxygen deficiency-rich/oxygen deficiency-poor stacked TiO2 based resistive random access memory by mist chemical vapor deposition

Liu

Hsu

Zheng

2022

Ceramics International

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Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition

Cited by 4 publications

References 29 publications

Effect of Carrier Gas on Spray Pyrolysis Deposited SnO₂ Thin Films

Effect of Carrier Gas on Spray Pyrolysis Deposited SnO₂ Thin Films

Investigations on Al₂O₃-Dielectric Wide-Gap Al_0.3Ga_0.7N Channel MOS-HFETs with Composite Al₂O₃/In Situ SiN Passivation

Investigation of oxygen deficiency-rich/oxygen deficiency-poor stacked TiO2 based resistive random access memory by mist chemical vapor deposition

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Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition

Cited by 4 publications

References 29 publications

Effect of Carrier Gas on Spray Pyrolysis Deposited SnO2 Thin Films

Effect of Carrier Gas on Spray Pyrolysis Deposited SnO2 Thin Films

Investigations on Al2O3-Dielectric Wide-Gap Al0.3Ga0.7N Channel MOS-HFETs with Composite Al2O3/In Situ SiN Passivation

Investigation of oxygen deficiency-rich/oxygen deficiency-poor stacked TiO2 based resistive random access memory by mist chemical vapor deposition

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Product

Resources

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Effect of Carrier Gas on Spray Pyrolysis Deposited SnO₂ Thin Films

Effect of Carrier Gas on Spray Pyrolysis Deposited SnO₂ Thin Films

Investigations on Al₂O₃-Dielectric Wide-Gap Al_0.3Ga_0.7N Channel MOS-HFETs with Composite Al₂O₃/In Situ SiN Passivation