Effects of activation treatment on the electrical properties of low temperature grown CdTe devices

Analysis of a novel CuCl2 back contact process for improved stability in CdTe solar cells

“…The VE‐Cu sample shows two deeper dominant defects (C) in the range of 0.43 to0.45 eV above the valence band, usually detected in our standard samples, which are not clearly attributed. Beach et al as well as Wei et al consider plausible to assign these values to the U‐centre Te 2− i : a deep acceptor level.…”

CdCl 2 activation treatment: A comprehensive study by monitoring the annealing temperature

“…At 410°C performance is worse due to an increment of deep defects and to compensation, again indicated by the response to the high frequency. The CV- DLCP profiles of the 395°C annealed device show our typical CdTe net acceptor distribution [6]. The DLCP curves at all frequency values range between 10 14 cm −3 in the bulk CdTe and 10 15 cm −3 approaching the junction.…”

“…Sample is etched and inserted in a vacuum chamber for copper and gold deposition. Finally the back contact is annealed at 190°C [6].…”

“…In previous studies we have reported the analysis of the activation treatment by changing the amount of CdCl 2 and keeping the same annealing temperature and time [6]. With this paper we go further and study the activation treatment by changing the temperature from 310°C to 410°C with different steps (310°C, 330°C, 360°C, 380°C, 395°C, 410°C) and analyzing the physical parameters of CdTe with atomic force microscopy, X-ray diffraction technique and the electrical characteristics by current-voltage, capacitance-voltage, drive-level capacitance profiling and admittance spectroscopy.…”

Optimization of physical properties of vacuum evaporated CdTe thin films with the application of thermal treatment for solar cells

“…It has zinc blende cubic structure with lattice constant 6.481 Å. Its 2 μm thickness layer is enough to absorb entire incident sunlight and covert into electricity [6][7][8][9]. It has enormous potential applications in the field of optoelectronic devices like solar cells, optical and nuclear detectors, light-emitting diodes (LEDs), field effect transistors, nonlinear integrated optical devices, lasers etc.…”