Effects of acetylene/ammonia mixtures on the properties of carbon films prepared by thermal chemical vapor deposition

Low-temperature CVD of η-Mn3N2−x from bis[di(tert-butyl)amido]manganese(II) and ammonia

“…48 For example, inhibition of film growth by ammonia has been reported for TiN deposition from TDMAT on SiO 2 , 49 and complete suppression reported for carbon deposition from acetylene on amorphous SiO 2 . 50 We have reported complete suppression of the growth of HfB 2 from Hf(BH 4 ) 4 on SiO 2 at 250 C with 1 mTorr of ammonia, 51 and recently determined that nucleation proceeds unabated but steady-state growth is suppressed by ammonia adsorption to HfB 2 surfaces. 52 Thus, it seems reasonable to conclude that inhibition of growth by high pressures of ammonia in our experiments also entails site-blocking by ammonia, which either suppresses nucleation on Si(100)-H or suppresses steady-state growth on the nucleated manganese nitride surface.…”

Aqueous Li+/Al3+ alkaline solution for CO2 capture and the massive Li–Al–CO3 hydrotalcite precipitation during the interaction between CO2 gas and the Li+/Al3+ aqueous solution

“…Consequently, the carbon fragment converted from these decomposed precursor gases to form carbon films on the substrate also increases. 58 In our previous work, we adopted CH 4 /NH 3 , 11 C 2 H 2 /NH 3 , 14 and C 2 H 4 /N 2 20 mixtures as the precursor gases to study the effect of deposition parameters on the properties of thermal CVD carbon films. A comparison between the results of this work and those of the previous work 11,14,20 at a specified process parameter is listed in Table III.…”

“…58 In our previous work, we adopted CH 4 /NH 3 , 11 C 2 H 2 /NH 3 , 14 and C 2 H 4 /N 2 20 mixtures as the precursor gases to study the effect of deposition parameters on the properties of thermal CVD carbon films. A comparison between the results of this work and those of the previous work 11,14,20 at a specified process parameter is listed in Table III. Table III shows the deposition temperature (1223 K) and working pressure (77 kPa) of using CH 4 /NH 3 mixtures is higher than those of using C 2 H 2 /NH 3 , C 2 H 4 /NH 3 , and C 2 H 4 /N 2 mixtures.…”

“…20 In this work, the pyrolysis of C 2 H 4 with added NH 3 is controlled by the first order process, four NH 3 molecules will suppress about one C 2 H 4 molecule to form the carbon film. Notably, as the deposition temperature is below 1073 K, the precursor gas NH 3 serves as the dilute gas in the thermal CVD processes; the suppressive effect of adding precursor gas NH 3 only occurred as the deposition temperature is above 1073 K. 14 The outlet contaminants of using C 2 H 4 are moderate, while the outlet contaminants of using CH 4 are small and the outlet contaminants of using C 2 H 2 are large.…”

“…Furthermore, the kinetics of the thermal CVD process using a C 2 H 4 /NH 3 mixture will be discussed, and the connection between the thermal CVD process and microstructure of carbon films will be also considered. Finally, the thermal CVD carbon deposition using a C 2 H 4 /NH 3 mixture is compared with those using CH 4 /NH 3 , 11 C 2 H 2 /NH 3 , 14 and C 2 H 4 /N 2 mixtures. 20…”