Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry

Katoh, Takeo; Kang, Hyun Goo; Paik, Ungyu; Park, Jea‐Gun

doi:10.1143/jjap.42.1150

Cited by 43 publications

(42 citation statements)

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“…The observation of defects in surfaces polished with ceria alone (Figs. 5 and 6) are consistent with results reported in past studies [38][39][40][41][42].…”

Section: Cmp Performance Of Composite Particlessupporting

confidence: 92%

“…To overcome this limitation, incorporation of ceria nanoparticles within the microgels was pursued. While nanoparticles of ceria are well known for their selectivity and removal of oxide from a wafer surface, they can also produce major and minor scratches [38][39][40][41][42]. Therefore, microcomposites of ceria nanoparticles and microgels were investigated to as a route towards significant improvements in the surface finish while achieving practical rates for oxide removal.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Novel ceria–polymer microcomposites for chemical mechanical polishing

Coutinho

Mudhivarthi

Kumar

et al. 2008

Applied Surface Science

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“…The observation of defects in surfaces polished with ceria alone (Figs. 5 and 6) are consistent with results reported in past studies [38][39][40][41][42].…”

Section: Cmp Performance Of Composite Particlessupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Novel ceria–polymer microcomposites for chemical mechanical polishing

Coutinho

Mudhivarthi

Kumar

et al. 2008

Applied Surface Science

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“…1,2 In most cases, a selected layer can be removed through the optimal design of slurries, which can include various kinds of abrasives and chemical components. [3][4][5] The various chemicals and abrasives in slurries can affect the interfacial surfaces that occur during the CMP process at different process temperatures. This effect can change the properties of the polishing pad and produce undesirable variation of the removal rate (RR) as well as within-wafer nonuniformity (WIWNU) throughout the pad lifetime.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)

Yang

Kim

et al. 2010

Journal of Elec Materi

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Temperature control to stabilize the microscale contact surface between the pad and wafer, especially to prevent pad surface degradation, plays an important role in chemical mechanical polishing (CMP) processing of sub-50-nm devices. In this work, we investigated the phenomenon of pad surface hardening for various process temperatures and developed an effective method to minimize changes of the mechanical properties of the pad surface using diamond conditioner. The pad hardening characteristics were measured based on the force-distance (F-D) curve obtained by atomic force microscopy (AFM), and thermogravimetric analysis (TGA). F-D curve data showed that the increase of the elastic modulus with pad usage time at high process temperature was $1.5 times higher than at low process temperature. Also, TGA of a used polishing pad revealed a link between the endothermic peak intensity at 600°C and pad surface hardening. To prevent surface glazing or hardening throughout the lifetime of a pad at high process temperature, the optimum diamond size was investigated. Pad wear was investigated for various diamond conditioners with diamond grit size ranging from 100 lm to 270 lm. The results of pad surface analysis using scanning electron microscopy (SEM) and three-dimensional optical profiling showed that the 210 lm grit size was best for removing deformed layers, with the pad surface remaining consistent during the lifetime of the pad as verified by TGA and the F-D curve. The results of pad surface analysis are important for the design of conditioners that can produce pads with stable dynamic mechanical properties and prolonged lifetime at high process temperature.

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“…The surfactant layer then acts as a passivation layer, which prevents the abrasive from coming into contact with the film surface. If taking kinematical energy into account, a larger particle can travel through the fluid more freely than a smaller particle [38]. The removal rate is thus strongly influenced by contact probability of the abrasives on the film surface [39].…”

Section: Effect Of Abrasive Particle Size On Removal Rate and Defectimentioning

confidence: 99%

Consumables for Advanced Shallow Trench Isolation (STI)

Burkhard

2007

Microelectronic Applications of Chemical Mechanical Planarization

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Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry

Cited by 43 publications

References 1 publication

Novel ceria–polymer microcomposites for chemical mechanical polishing

Novel ceria–polymer microcomposites for chemical mechanical polishing

Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)

Consumables for Advanced Shallow Trench Isolation (STI)

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