Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of polycrystalline-Si thin-film transistors

Juang, Miin‐Horng; Chiu, Yi-Ming

doi:10.1088/0268-1242/21/3/014

Cited by 14 publications

(5 citation statements)

References 11 publications

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“…The doses were selected based on the levels that are commonly used. 4,[14][15][16] CMOS device fabrication.-One objective of this work was the development of a low-temperature, glass-compatible CMOS process, where the self-aligned (SA) p-and n-channels, and the LDD nchannel TFTs were fabricated simultaneously. The SA n-channel TFT has no LDD.…”

Section: Methodsmentioning

confidence: 99%

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Mativenga

Choi

et al. 2011

J. Electrochem. Soc.

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Hot carrier (HC) instability of thin-film transistors (TFTs) fabricated on single-crystal,silicon-on-glass (SiOG) substrates is studied. The formation of the SiOG substrate is achieved by the transfer of a single-crystal silicon film to a display-glass substrate. The transfer process creates an in-situ barrier layer free of mobile ions in the glass adjacent the silicon film. The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with gate voltage swing values of 180 mV/decade, electron and hole mobilities of ∼ 251 and 201 cm2/V·s respectively, and threshold voltages of approximately −0.3 and −1.2 V for the n- and p-channel TFT’s respectively. While p-channel TFTs exhibit good stability, on-current degradation is observed in the transfer characteristics of the n-channel TFT. The degradation is due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure in the n-channel SiOG TFTs to minimize HC instability is reported. The LDD design incorporates 2 μm offset regions. The offset regions are lightly doped (n-) with phosphorus ions implanted at 10 keV. N-levels of ∼ 1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that reduce HC instability while minimizing degradation in the on-state device performance.

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Section: Methodsmentioning

confidence: 99%

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Mativenga

Choi

et al. 2011

J. Electrochem. Soc.

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“…To determine the appropriate LDD dose, three samples with LDD doses of 1 × 10 13 cm -2 , 2 × 10 13 cm -2 , and 3 × 10 13 cm -2 were fabricated and analyzed. The doses were selected based on based on the levels that are commonly used (11)(12)(13)(14).…”

Section: Cmos Device Structurementioning

confidence: 99%

Reduction of Hot Carrier Effects in Corning Silicon-on-Glass TFTs

Mativenga¹,

Choi²,

Choi³

et al. 2010

ECS Trans.

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Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Corning® Silicon-on-Glass (SiOG) substrates is studied (1). The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with electron and hole field effect mobilities (μfe) of ~251 and 201 cm2/V⋅s, threshold voltages of ~-0.3 and -1.2 V, and gate swing (S) values of ~180 mV/dec. While p-channel TFTs exhibit good stability, on-current (ION) degradation is unfortunately observed in the transfer characteristics of the n-channel TFT due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure to minimize HC instability in the n-channel SiOG TFTs is reported. The LDD design has 2 μm regions produced by ion implanting phosphorus at 10 keV to a light doping (n-) level. N- levels of ~1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that leads to HC improvement with minimal detrimental impact to the on-state device performance.

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“…This is one of the bias-dependent issues caused by defects in poly-Si TFT devices, which cause poor switching characteristics such as low on/off current ratio [3][4][5][6][7]. It has been reported that various drain structures can decrease the leakage current in poly-Si TFTs due to reduction of electric field intensity near the drain region [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%