Effects of 1064 nm laser on MOS capacitor

Llido, R.; Masson, Pascal Le; Régnier, A.; Goubier, V.; Haller, G.; Pouget, Vincent; Lewis, Dean

doi:10.1016/j.microrel.2012.06.123

Cited by 7 publications

(5 citation statements)

References 13 publications

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“…However, because of the technology available at that time, these techniques were limited to long‐duration irradiations at wavelengths for which silicon linearly absorbs the laser flux (i.e., the photon energy is higher than the band gap of the material). [ 112–118 ] The laser energy deposition in this case is thus limited by the opaque metallic components on the frontside of the device. The later technological developments of femtosecond lasers as well as near‐infrared lasers enabled to irradiate the device from the silicon substrate (i.e., the backside) by two‐photon absorption—and, consequently, to generate free carriers with a remarkable spatial resolution.…”

Section: Self‐limited Excitation With Ultrashort Pulsesmentioning

confidence: 99%

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications.

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Section: Self‐limited Excitation With Ultrashort Pulsesmentioning

confidence: 99%

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

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“…In this context, several studies have been conducted during the last decade on laser-transistor interactions. [5][6][7] Although these works have shown an impact of the laser on the device, irradiations at 1064 nm were involved implying only modest freecarrier production (ionization) at the transistor region. To solve this issue, El-Mamouni et al employed a longer wavelength performing laser experiments relying on localized two-photon ionization on fin fieldeffect transistors (FinFETs).…”

mentioning

confidence: 99%

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

Chambonneau

Souiki-Figuigui

Chiquet

et al. 2017

Applied Physics Letters

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We demonstrate that infrared femtosecond laser pulses with intensity above two-photon ionization threshold of crystalline silicon (c-Si) induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor (MOS) transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, defectivity) and for new developments in the growing field of ultrafast microelectronics.

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“…8 the capacitance-voltage (C-V) and currentvoltage (I-V) characteristics of a tunnel capacitor are reported before and after an irradiation of 1000 laser shots using a high energy beam (E=0.45µJ). In accord with [8], the laser effect on C-V curves is not evident after the stress. Moreover, in our case the thermal budget of the femtosecond laser interaction with the substrate and the oxide, is extremely low.…”

Section: A Effect Of Laser Irradiation On Tunnel Capacitormentioning

confidence: 52%

“…Several papers are presented in literature concerning the effect of heavy ion and laser irradiation on NAND Flash memories to investigate the presence of current spikes [3,4] and in CMOS circuits to inspect the mechanism for simultaneous charge collection [5,6,7]. Others studied the effects induced by static photoelectric laser stimulation (1064 nm) on a 90 nm technology metal-oxide-semiconductor (MOS) capacitor [8]. Moreover we found some studies dealing with SRAM cells exposed to pulsed photoelectrical laser stimulation, for applications in modeling and cell characterization [9].…”

Section: Introductionmentioning

confidence: 99%

NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

Marca¹,

Chambonneau²,

Souiki-Figuigui³

et al. 2016

2016 IEEE International Reliability Physics Symposium (IRPS)

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In this paper we present the behavior of a single nonvolatile Flash floating gate memory cell when it is irradiated, from the backside, by femtosecond laser pulses. For the first time we show that the memory cell state can change using this type of stimulation. The measurements were carried out with an experimental setup with an ad hoc probe station built around the optical bench. We present the experimental results using different memory bias conditions to highlight the charge injection in the floating gate. Then, we study the cell degradation to check the state of the tunnel oxide and the drain-bulk junction. The aim is to understand the failure mechanisms and use this technique for accelerated reliability tests. Finally we report the experimental results achieved for different laser energies.

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Effects of 1064 nm laser on MOS capacitor

Cited by 7 publications

References 13 publications

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

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