Effective one-dimensional electronic structure of InGaAs quantum dot molecules

Thudsalingkarnsakul, N.; Limwongse, T.; Siripitakchai, N.; Panyakeow, Somsak; Kanjanachuchai, Songphol

doi:10.1016/j.mee.2007.12.016

Cited by 6 publications

(1 citation statement)

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“…The observed peak at 1.377 eV is indeed weak with respect to sample A, yet it suggests that a significant fraction of excitons are able to combine radiatively. The 1.377-eV peak energy is higher than the bulk In 0.13 Ga 0.87 As bandgap of 1.323 eV and agrees well with the electron and hole eigenenergies estimated from self-consistent solutions of coupled Poisson-Schrodinger equation [ 29 ].…”

Section: Resultssupporting

confidence: 77%

Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns

2011

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InAs quantum dots (QDs) grown on InGaAs cross-hatch pattern (CHP) by molecular beam epitaxy are characterized by photoluminescence (PL) at 20 K. In contrast to QDs grown on flat GaAs substrates, those grown on CHPs exhibit rich optical features which comprise as many as five ground-state emissions from [1-10]- and [110]-aligned QDs, two wetting layers (WLs), and the CHP. When subject to in situ annealing at 700°C, the PL signals rapidly degrades due to the deterioration of the CHP which sets the upper limit of overgrowth temperature. Ex situ hydrogen annealing at a much lower temperature of 350°C, however, results in an overall PL intensity increase with a significant narrowing and a small blueshift of the high-energy WL emission due to hydrogen bonding which neutralizes defects and relieves associated strains.

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Section: Resultssupporting

confidence: 77%