Effective nonlinear GaSe crystal. Optical properties and applications

Allakhverdiev, K. R.; Yetis, M. Ö.; Özbek, S.; Baykara, T.; Salaev, É. Yu.

doi:10.1134/s1054660x09050375

Cited by 140 publications

(93 citation statements)

References 87 publications

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“…20,34,35 The intensity of the three peaks decreases prominently as the GaSe layers are thinned. The A 1 1g and E 1 2g peaks can hardly be detected for 1L crystals ( Figure 5a, red curve).…”

Section: Resultsmentioning

confidence: 96%

Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene

et al. 2015

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Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to transferring, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here we report the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. GaSe crystals are found to nucleate predominantly on random wrinkles or grain boundaries of graphene, share a preferred lattice orientation with underlying graphene, and grow into large (tens of micrometers) irregularly shaped, single-crystalline domains. The domains are found to propagate with triangular edges that merge into the large single crystals during growth. Electron diffraction reveals that approximately 50% of the GaSe domains are oriented with a 10.5 ± 0.3° interlayer rotation with respect to the underlying graphene. Theoretical investigations of interlayer energetics reveal that a 10.9° interlayer rotation is the most energetically preferred vdW heterostructure. In addition, strong charge transfer in these GaSe/Gr vdW heterostructures is predicted, which agrees with the observed enhancement in the Raman E(2)1g band of monolayer GaSe and highly quenched photoluminescence compared to GaSe/SiO2. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.

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“…20,34,35 The intensity of the three peaks decreases prominently as the GaSe layers are thinned. The A 1 1g and E 1 2g peaks can hardly be detected for 1L crystals ( Figure 5a, red curve).…”

Section: Resultsmentioning

confidence: 96%

Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene

et al. 2015

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“…A single layer of GaSe is composed of covalently bonded Se−Ga−Ga−Se atoms, with a lattice constant of 0.374 nm and D 3h symmetry2930. Bulk GaSe shows many interesting electrical and optical properties, e.g., anisotropic Hall-mobility31, electron-hole liquid behavior32, and up-conversion luminescence33, and has been widely used in the fields of optoelectronics, nonlinear optics, and terahertz radiation343536. Recently, both theoretical and experimental work have revealed many new properties as bulk GaSe has been thinned systematically to 2D crystals.…”

mentioning

confidence: 99%

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

Lin

Puretzky

et al. 2014

Sci Rep

245

253

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Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO2/Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 μm in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their structure and orientation were characterized from atomic scale to micrometer scale. The size, density, shape, thickness, and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature, and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors.

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“…These properties make S-doped GaSe a promising material for THz generation. A narrow line-width absorption peak, identified as a rigid phonon mode E 00 (2) , appears at 1.79 THz, shifts towards shorter wavelengths with doping, and becomes vanishingly small at 11 weight % doping. The results found in this work can prove useful in selecting the type of three frequency interaction.…”

Section: Resultsmentioning

confidence: 98%

“…The atomic bonds between planes within these packages are ionic-covalent in nature, while those between the packages are of the weaker Van-der-Waals type. Therefore with careful preparation by a thin blade it is possible to produce optical quality surfaces along this direction [2,3].…”

Section: Introductionmentioning

confidence: 99%