Growth and optical properties of solid solution crystals GaSe1−xSx

Кох, К. А.; Molloy, J. F.; Naftaly, Mira; Andreev, Yu. M.; Svetlichnyi, V. A.; Ланский, Г. В.; Лапин, И. Н.; Izaak, T. I.; Кох, А. Е.

doi:10.1016/j.matchemphys.2015.01.058

Cited by 38 publications

(20 citation statements)

References 33 publications

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“…The temperature distribution shown in figure 3 was measured before inserting the growth vessel. In growing a layered crystal such as GaSe, the (001) plane grows along the direction with the largest temperature gradient [21]. The growth process is as follows.…”

Section: Methodsmentioning

confidence: 99%

“…It is expected that the crystal properties for generating THz waves can be improved by doping GaSe with In. Several studies have been done with the aim of improving the properties by doping GaSe with various elements such as S [20,21], Te [22,23], In, Al [24], Er [25], Ti [26], and Ge [27]. These reports of doped GaSe crystals are reviewed in [28].…”

Section: Introductionmentioning

confidence: 99%

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In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

et al. 2020

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The growth rate of crystalline GaSe from solution was increased by using indium as a solvent. The solubility and concentration gradient of Se were measured using differential scanning calorimetry (DSC). The Se solubility and the temperature coefficient of the solubility were respectively 15 times and 2.2 times greater in crystals grown from an In flux with GaSe at saturation compared with the case of Se dissolved in a Ga flux. In this study, we succeeded in growing In x Ga 1−x Se ingots from an In flux without the need for a seed crystal, and in increasing the growth rate of GaSe from solution. In addition, we used difference frequency generation to generate THz waves (with a frequency of 9.7 THz) in an In x Ga 1−x Se mixed crystal and investigated the relationship between the output energy of the THz radiation and the interaction length of the excitation light. The conversion efficiency of THz wave (9.7 THz) from the In x Ga 1−x Se mixed crystal with thickness of 860 μm was 26 times greater than that of GaSe crystal with thickness 100 μm grown from Ga solvent.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

et al. 2020

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“…Recently, it was established that optimal S-doping also increases the damage threshold for from 4 to 5 times 17,18 . At the reasonably high pump fluence, the phase-matched frequency conversion efficiency within the mid-IR raises up to 15 times [19][20][21] . Impressive results were demonstrated on frequency conversion in S-doped GaSe of ultrashort (ps and fs) pulses into mid-IR 13,22 .…”

Section: Introductionmentioning

confidence: 99%

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

et al. 2015

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Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe & GaP detectors and LT-GaAs generator for homemade of pure and S-doped GaSe is carried out. It was established that in spite of not optimized parameters pure and doped GaSe:S(0.3 mass%) crystal are comparable, relatively, in generation efficiency and detection sensitivity to commerce units due to lower nonlinear optical loss and much higher damage threshold. The advantages are in force from pump fluences of below 5 mJ/cm 2 for pure GaSe. The closer S-doping to optimal concentration, the lover fluences resulting in the advantages. Pure and S-doped GaSe demonstrate higher reliability and larger dynamic range of operation. Recorded absorption spectra well match known spectra.

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“…It allowed easier processing at arbitrary directions and improves frequency conversion efficiency. Modified properties and improved efficiencies are reported for a number of doped crystals: light (GaSe:S) and heavely S-doped GaSe crystals that also referred to as solid solution crystals GaSe:GaS (GaSe 1-x S x , where x is mixing ratio) 12,13,14,15,16 , GaSe:In and Ga 1-x [36][37][38][39][40] , which consider some other double element doped GaSe crystals. Strengthened structuregives opportunity of the application in out-of-door applied systems 41 .…”

Section: Introductionmentioning

confidence: 99%

Model studies of THz-range generation by down-conversion in GaSe and GaSeS crystals

et al. 2015

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Model study of not phase matched and phase matched optical rectification or down-conversion of Ti:Sapphire laser pulses at 950 nm into THz and far-IRrange in pure and S-doped GaSe single crystals is carried out. First, the ordinary and extraordinary wave dispersions of the GaSe refractive indices were measured by terahertz time-domain spectroscopy (THz-TDS). Measured data were approximated in the form of Sellmeier dispersion equations for 0.62 -2000 µm range with using available shorter wave data.

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Growth and optical properties of solid solution crystals GaSe1−xSx

Cited by 38 publications

References 33 publications

In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

Model studies of THz-range generation by down-conversion in GaSe and GaSeS crystals

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Growth and optical properties of solid solution crystals GaSe1−xSx

Cited by 38 publications

References 33 publications

InxGa1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

InxGa1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

Model studies of THz-range generation by down-conversion in GaSe and GaSeS crystals

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Product

Resources

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In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation

In_xGa_1−xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation