Effective-mass anisotropy in GaAs-(Ga,Al)As two-dimensional hole systems: comparison of theory and very high-field cyclotron resonance experiments

Cole, Bryan E.; Batty, W.; Imanaka, Y.; Shimamotο, Y.; Singleton, John; Chamberlain, J.M.; Miura, Noriko N.; Henini, M.; Cheng, T.S.

doi:10.1088/0953-8984/7/48/003

Cited by 8 publications

(9 citation statements)

References 13 publications

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“…However, this was not observed in our experiment. We believe that other mechanisms such as the built-in piezoelectric field, effective mass anisotropy, [29][30][31] and interface roughnesses 26,32 could be related to the PL peak shift as a consequence of the different crystallographic orientations.…”

Section: Fig 1 Hrxrd Experimental Profile and Theoretical Best Fit mentioning

confidence: 98%

Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs

Teodoro

Dias

Laureto

et al. 2008

Journal of Applied Physics

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Suppression of nonradiative recombination process in directly Si-doped InAs/GaAs quantum dots J. Appl. Phys. 110, 103511 (2011) GaN directional couplers for integrated quantum photonics Appl. Phys. Lett. 99, 161119 (2011) Room temperature spin filtering effect in GaNAs: Role of hydrogen Appl. Phys. Lett. 99, 152109 (2011) Carrier localization and related photoluminescence in cubic AlGaN epilayers J. Appl. Phys. 110, 063517 (2011) Additional information on J. Appl. Phys. The photoluminescence ͑PL͒ technique as a function of temperature and excitation intensity was used to study the optical properties of multiquantum wells ͑MQWs͒ of GaAs/ Al x Ga 1−x As grown by molecular beam epitaxy on GaAs substrates oriented in the ͓100͔, ͓311͔A, and ͓311͔B directions. The asymmetry presented by the PL spectra of the MQWs with an apparent exponential tail in the lower-energy side and the unusual behavior of the PL peak energy versus temperature ͑blueshift͒ at low temperatures are explained by the exciton localization in the confinement potential fluctuations of the heterostructures. The PL peak energy dependence with temperature was fitted by the expression proposed by Pässler ͓Phys. Status Solidi B 200, 155 ͑1997͔͒ by subtracting the term E 2 / k B T, which considers the presence of potential fluctuations. It can be verified from the PL line shape, the full width at half maximum of PL spectra, the E values obtained from the adjustment of experimental points, and the blueshift maximum values that the samples grown in the ͓311͔A / B directions have higher potential fluctuation amplitude than the sample grown in the ͓100͔ direction. This indicates a higher degree of the superficial corrugations for the MQWs grown in the ͓311͔ direction.

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Section: Fig 1 Hrxrd Experimental Profile and Theoretical Best Fit mentioning

confidence: 98%

Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs

Teodoro

Dias

Laureto

et al. 2008

Journal of Applied Physics

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“…We have performed such calculations using the ͑311͒ Hamiltonian appropriate to our samples, derived from a rotation of the Luttinger Hamiltonian. 24 An approximate potential is used and the Landau levels are derived in the axial approximation. In addition to simplifying the calculations, the axial approximation is useful in identifying the likely strong transitions, since selection rules are well defined in this case.…”

Section: ϫ2mentioning

confidence: 99%

“…In order to calculate the band structure of 2DHS grown on the ͑311͒ crystal plane we use a ''rotated'' Luttinger Hamiltonian, applicable to general ͓hkk͔-grown structures. 24,31 The single-band, Bϭ0 envelope function equations are solved using an accurate shooting method 32 for the particular QW potential shape and then finally Landau levels are calculated in the axial approximation.…”

Section: Landau-level Calculationsmentioning

confidence: 99%

Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/(Al,Ga)As quantum wells

et al. 1997

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The cyclotron-resonance behavior of a series of p-type, low p s , asymmetrically doped ͑311͒A quantum wells has been measured over two orders of magnitude in energy. Landau levels for the structures studied have been calculated for comparison with experiment. The calculations use a rotated Luttinger Hamiltonian and invoke the axial approximation. In the quantum limit and at certain far-infrared energies we observe two resonances widely separated in field. We find at the lowest fields that the samples exhibit a light effective mass. For the narrowest quantum well the cyclotron resonance ͑CR͒ broadens and shifts to a slightly lighter mass into the quantum limit, above about 2 T. The CR energy is modeled by inter-Landau-level transitions from the highest level, and a discontinuous evolution to a higher effective mass, observed as the second resonance above 8 T, is explained by crossing of the highest two Landau levels, as modeled in the calculation. The discontinuous evolution to a higher mass is found to shift to lower fields as the well width increases, as suggested from the modeling. For the wider quantum wells the influence of additional anticrossings at intermediate fields, due to the proximity of the second subband, is observed. CR energy for these samples is adequately modeled at energies above and below the region of subband anticrossing. The limitations of the modeling procedure have been discussed and a number of features of the experimental data are explained qualitatively in terms of the expected modifications to the hole Landau-level structure when full Landau-level mixing is incorporated into the modeling. The influence of hole-hole interactions and factors influencing the CR scattering time are also discussed briefly. ͓S0163-1829͑97͒08804-8͔

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“…3,4 To improve possible device design, a detailed knowledge of the subband dispersion and its relation to the potential is required. Of special interest are studies of 2DHS systems grown on high index-plane substrates; these exhibit excellent transport properties and may be advantageous for device application.…”

Section: Far-infrared Intersubband Transitions In a Twomentioning

confidence: 99%

Far-infrared intersubband transitions in a two-dimensional GaAs/(Al,Ga)As hole system: Direct comparison of experiment and calculation

Cole

Chamberlain

Henini

et al. 1996

Journal of Applied Physics

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Effective-mass anisotropy in GaAs-(Ga,Al)As two-dimensional hole systems: comparison of theory and very high-field cyclotron resonance experiments

Cited by 8 publications

References 13 publications

Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs

Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs

Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/(Al,Ga)As quantum wells

Far-infrared intersubband transitions in a two-dimensional GaAs/(Al,Ga)As hole system: Direct comparison of experiment and calculation

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