Far-infrared intersubband transitions in a two-dimensional GaAs/(Al,Ga)As hole system: Direct comparison of experiment and calculation

Cole, Bryan E.; Chamberlain, J.M.; Henini, M.; Nakov, V.; Gobsch, G.

doi:10.1063/1.363564

Cited by 9 publications

(7 citation statements)

References 12 publications

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“…To answer this question, we look to the quantum wells of semiconductor interface devices. For a GaAs quantum well of width L = 70 Å and hole density n 2D = 3.0 × 10 11 heavy holes cm −2 , which was used in far-infrared absorption spectroscopy [52] of the intersubband energy spacing in GaAs/(Al, Ga)As, we find = 12.9, m * /m = 0.45 [53], the effective bohr = 15.2 Å, r 2D s = 6.8, and L/r 2D s = 0.68. Because this system is close to the true 2D limit, that limit is in fact of physical interest.…”

Section: Liquid Drop Model and Surface Energiesmentioning

confidence: 99%

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Pollack

Perdew

2000

J. Phys.: Condens. Matter

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The exchange-correlation energy Exc is a significant part of the total energy of the quasi-two-dimensional electron gas. We investigate the performance of three-dimensional density functionals Exc [n ] in this system, showing how the local density approximation (LDA), the generalized gradient approximation (GGA), and the meta-GGA behave as functions of quantum well width or layer thickness. Shrinking the width in one direction is an example of non-uniform density scaling; we generalize the non-uniform scaling condition on the exact Exc [n ] to densities n (r ) that are infinitely extended. We find that, although all three semi-local approximations break down as the true two-dimensional (zero-width) limit is approached (and as the reduced density gradients diverge almost everywhere), these approximations yield good results for wide quasi-two-dimensional systems. The simple liquid drop model provides unexpectedly accurate results for exchange-correlation energies of the quasi-two-dimensional electron gas, and an insight into the domain of validity of the standard functionals. An exact-exchange functional provides the correct approach to the true two-dimensional limit.

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Section: Liquid Drop Model and Surface Energiesmentioning

confidence: 99%

Untitled

Pollack

Perdew

2000

J. Phys.: Condens. Matter

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“…9 The Si-SiGe material system however presents some significant theoretical and growth challenges associated with the built-in strain of these lattice mismatched materials. 12 We are investigating the properties of bound-to-bound intervalence subband transitions in GaAs QWs with high Al composition barriers for midinfrared emitters. Most of the research in the valence band of this system, however, has been focusing on bound-to-continuum transitions for infrared photodetectors.…”

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confidence: 99%

Bound-to-bound midinfrared intersubband absorption in carbon-doped GaAs∕AlGaAs quantum wells

Malis¹,

Pfeiffer²,

West³

et al. 2005

Applied Physics Letters

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Articles you may be interested inStrong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices J. Appl. Phys. 113, 053103 (2013); 10.1063/1.4790305 Mid-infrared hole-intersubband electroluminescence in carbon-doped Ga As ∕ Al Ga As quantum cascade structures Appl. Phys. Lett. 88, 081117 (2006); 10.1063/1.2179117 Near-infrared intersubband transitions in InGaAs-AlAs-InAlAs double quantum wells Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrateBound-to-bound intersubband absorption in the valence band of modulation-doped GaAs quantum wells with digitally alloyed AlGaAs barriers was studied in the midinfrared wavelength range. A high-purity solid carbon source was used for the p-type doping. Strong narrow absorption peaks due to heavy-to-heavy hole transitions are observed with out-of-plane polarized light, and weaker broader features with in-plane polarized light. The heavy-to-heavy hole transition energy spans the spectral range between 206 to 126 meV as the quantum well width is increased from 25 to 45 Å. The experimental results are found to be in agreement with calculations of a six-band k · p model taking into account the full band structure of the digital alloy.

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“…For technical applications, it is desirable to work with normal incidence of the infrared light. For this purpose, recently, also p-type quantum well detectors using intersubband transitions of holes were made [233][234][235][236][237][238][239][240][241][242][243][244]. Here, the polarization selection rules are different because of the different symmetry of the hole wave functions in the valence band, and consequently, mid-infrared light can be absorbed under normal incidence.…”

Section: Intersubband-photodetectorsmentioning

confidence: 99%

Ultrafast Phenomena in Semiconductors

Tsen¹

2001

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Far-infrared intersubband transitions in a two-dimensional GaAs/(Al,Ga)As hole system: Direct comparison of experiment and calculation

Cited by 9 publications

References 12 publications

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Bound-to-bound midinfrared intersubband absorption in carbon-doped GaAs∕AlGaAs quantum wells

Ultrafast Phenomena in Semiconductors

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