Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method

Cho, Minkyu; Xu, Zhiyu; Bakhtiary-Noodeh, Marzieh; Jeong, Hoon; Tsou, Chuan‐Wei; Detchprohm, Theeradetch; Dupuis, R. D.; Shen, Shyh Chiang

doi:10.1109/ted.2021.3069153

Cited by 17 publications

(7 citation statements)

References 24 publications

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“…Due to their natural visible-blind characteristics and excellent physical and chemical stabilities, GaN-based PDs show great potential for high-sensitivity UV detection. Various GaN PDs, including photoconductors, Schottky barrier photodiodes, , metal–semiconductor–metal photodetectors, , p-i-n photodiodes, , and avalanche photodiodes, , have been widely explored over the past two decades.…”

Section: Introductionmentioning

confidence: 99%

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Wang

You

et al. 2022

ACS Photonics

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We report high-performance visible-blind ultraviolet (UV) phototransistors (PTs) based on an enhanced HEMT structure. In dark conditions, the conduction channel was depleted, and the dark current density was suppressed to 2.63 × 10 −10 mA/mm. Under 345 nm UV illumination, the depletion region shrinks, and the two-dimensional electron gas (2DEG) recovers. A high photocurrent density of 37.39 mA/mm, a peak responsivity of 6.80 × 10 4 A/W, a large photo-to-darkcurrent ratio (PDCR) of 1.42 × 10 11 , and a superior UV-to-visible rejection ratio (UVRR) of 4.84 × 10 7 are exhibited. Most importantly, the device presents an ultrafast response time of 11.33 μs/65.52 μs, which is due to the significant suppression of the persistent photoconductivity effect by the built-in electric field in the p−n junction. The results suggest that the p-GaN/AlGaN/GaN PT is a brand-new device model that combines the advantages of photoconductors with high responsivity and photodiodes with low dark current and fast response time.

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Section: Introductionmentioning

confidence: 99%

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Wang

You

et al. 2022

ACS Photonics

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“…The responsivity decreased with increasing wavelength of incident light and demonstrated a sharp cutoff at around 365 nm, which corresponds to the bandgap of the GaN layer . Based on the responsivity versus illumination wavelength curve, the UV/visible rejection ratio, which slightly decreased with increasing drain voltage, could be calculated as the maximum of about 2.5 × 10 3 at drain voltage of 0.1 V, which is better than the traditional GaN based Schottky, p-i-n, and metal–semiconductor-metal (MSM)-type PDs. − It should be noted that the responsivity of the device was still on the order of 10 4 at such an ultralow drain voltage, which could be comparable to the UV PDs based on AlGaN/GaN fin-shaped capacitor, and may largely reduce the power consumption.…”

Section: Resultsmentioning

confidence: 95%

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photogenerated carriers and make it work as a twoterminal normally off device. The device exhibited a high responsivity of 2.1 × 10 7 A/W and a high specific detectivity of 1.7 × 10 15 Jones under the illumination of 9.7 μW/cm 2 , indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.

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“…[ 26 ] These deep energy level impurities as traps may produce a large leakage current because a trap‐assisted tunnelling process predominates the leakage current component at high reverse bias voltages. [ 27 ] Since the dark current is mainly dependent on the trap states, the lifetimes of the electrons in the trap states are related to the electric field, so the magnitude of a trap‐assisted current is distinct at different electric fields. [ 28 ] It is noted that the dark current of the device consists of two parts and the light current of the device consists of three parts.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Nanopipes and an Inserted n‐AlGaN Interlayer on GaN Avalanche Photodiodes Performance

Sun,

Yang,

Zhao

et al. 2023

Physica Status Solidi (a)

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The effect of nanopipe defects on the device performance of Gallium nitride (GaN) avalanche photodiodes (APDs) is investigated and the influence mechanism is analyzed. It is discovered that nanopipes can incorporate more carbon impurities, resulting in the introduction of more deep energy level defects into the epitaxial layers. This causes an increase in device leakage and challenges in distinguishing between light current and dark current. It is found that an inserted n‐AlGaN interlayer can effectively block nanopipes and improve device performance significantly.

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Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method

Cited by 17 publications

References 24 publications

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

The Effect of Nanopipes and an Inserted n‐AlGaN Interlayer on GaN Avalanche Photodiodes Performance

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