Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa, Guillermo; Ossorio, Óscar G.; García, Héctor; Sahelices, Benjamin; Castán, Helena; Dueñas, S.; Kull, Mart; Tarre, Aivar; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne; Kukli, Kaupo

doi:10.1016/j.sse.2021.108085

Cited by 7 publications

(6 citation statements)

References 17 publications

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“…In addition, with the recent rise of quantum applications, the use of resistive Many attempts have been studied to investigate the potential mechanism of doping and, thus, to pursue better performance including voltages, stability, multi-states storage capability as well as synaptic behavior. [24][25][26][27][28][29][30] Lübben et al systematically studied how the material purity, chemistry, and concentrations of intrinsic/extrinsic doping influence devices' kinetics and, thus, affect the performance and functionalities. [24] Raeis-Hosseini et al introduced Zr in TaO x -based RRAM to achieve stable bipolar resistive switching properties with reliable endurance and retention, since the doped Zr can enhance the stability of the conductive filament.…”

Section: Introductionmentioning

confidence: 99%

“…[26] Ismail et al demonstrated HfAlO x alloy-based memristor by using ALD to prepare the RS layer, achieving a forming-free switching behavior with a high current ON/OFF ratio, highly controllable conductance, [27] and better synaptic characteristics. [28,29] Zhang et al introduced the Hf element into ZnO by co-sputtering to solve the instability issue of ZnObased RRAM and, thus, achieved remarkable 10 8 pulse endurance as well as an ON/OFF ratio of 2 order. [30] However, among the existing works, several studies focused on Zn-doped HfO film, and none of them looked into the use in RRAM.…”

Section: Introductionmentioning

confidence: 99%

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Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Lan

Chen

et al. 2023

Adv Elect Materials

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The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn‐doped HfOx‐based resistive random‐access memory (HfZnO RRAM), with improved performance. As compared with HfOx RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3×), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 105 cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving ≈90% accuracy in a simulated multi‐layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped‐RRAM to be used in a wide range of temperatures including quantum computing and deep‐space exploration is shown.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Lan

Chen

et al. 2023

Adv Elect Materials

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“…El código usado para nombrar las diferentes muestras indica el número de ciclos usados para cada óxido, HfO 2 (H) y Al 2 O 3 (A). Tabla publicada en [222].…”

Section: Estructuras Mim Cuyo Dieléctrico Es Hfo 2 En Combinación Con...unclassified

“…3.23 que la muestra que presenta capas de HfAlO x separando varias capas de HfO 2 (H9A1) presenta propiedades aislante mucho más definidas que el dispositivo cuyo dieléctrico está compuesto por HfAlO x (H1A1). promediadas.Imagen publicada en [222].…”

Section: Estructuras Mim Cuyo Dieléctrico Es Hfo 2 En Combinación Con...unclassified

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Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Vinuesa¹

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Como creo que es habitual para todo doctorando, esta tesis ha llegado a su fin gracias a muchas personas que, tanto dentro como fuera de la universidad, han contribuido a mi crecimiento como persona. A todas ellas les agradezco de corazón el camino recorrido juntos:En primer lugar a mis directores de tesis, el Dr. Salvador Dueñas y la Dra. Helena Castán, por su ofrecimiento y disposición a que formase parte de su grupo de investigación y realizase el doctorado con ellos. También debo darles las gracias por su cercanía e incansable amabilidad, siempre están dispuestos a ayudar de cualquiera de las formas. Creo sinceramente que hacen de la Universidad de Valladolid una mejor institución.A mi compañero de laboratorio, Óscar, por su infinita paciencia enseñándome a manejarme en el laboratorio, gracias a él he tenido siempre con quien conversar, y lo más importante, con quien quejarme, la experimentación ha sido siempre mas amena a su lado. Agradezco también al Dr. Héctor García su ayuda en el laboratorio, ya sea en forma de conocimiento o técnicas de experimentación, y al Dr. Benjamín Sahelices su caracter risueño y auxiliador.Si no fuera por la colaboración y comunicación constante con la

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Review on role of nanoscale HfO2 switching material in resistive random access memory device

Napolean

Rajesh

et al. 2022

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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Cited by 7 publications

References 17 publications

Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Review on role of nanoscale HfO2 switching material in resistive random access memory device

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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Cited by 7 publications

References 17 publications

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Review on role of nanoscale HfO2 switching material in resistive random access memory device

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Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature