Effect Zinc Ion Concentration on Structural and Optical Properties of ZnS Thin Films Prepared by Chemical Bath Deposition Technique

Abstract

3 Zn(NO ) ‫ي‬ ‫ي‬ ‫ضر‬ ‫ي‬ ‫ضر‬ ‫ل‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ص‬ 2+ Zn ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ضرث‬ ‫ي‬ ) 2 ) 2 SC(NH ) ‫ر‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ضرل‬ ‫يل‬ ‫ي‬ ‫ي‬ ‫ضر‬ ‫ل‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ص‬ -2 S .) ‫ث‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ضل‬ ‫يز‬ ‫ي‬ ‫ي‬ ‫يي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ضر‬ ‫ل‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ض‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ع‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ 0.05M ‫ي‬ 0.1M ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ضري‬ ‫ية‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ضردص‬ ‫يص‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫عح‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ص‬ ‫ضر‬ ‫ي‬ . ‫يل‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ة‬ ‫ض‬ ‫أ‬ ‫ضء‬ ‫ضرهي‬ ‫فل‬ ‫ل‬ ‫رأل‬ ‫ض‬ ‫ضرأ‬ ‫ح‬ ‫ع‬ ‫ضر‬ o K 473 ‫ية‬ ‫ضردص‬ ‫ن.‬ ‫عي‬ ‫ل‬ ‫ة‬ ‫ير‬ ) ‫ي‬ ‫ي‬ ‫ي‬ ‫ضرل‬ ‫يع‬ ‫ي‬ ‫ي‬ ‫ض‬ ‫يي‬ ‫ي‬ ‫ي‬ ‫أ‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫يق‬ ‫ضز‬ ‫ييد‬ ‫ي‬ ‫ي‬ ‫ل‬ ‫يل‬ ‫ي‬ ‫ي‬ ‫ل‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ضري‬ XRD ) ، ‫يل‬ ‫ي‬ ‫ي‬ ‫يب‬ ‫ي‬ ‫ي‬ ‫أ‬ ‫ضن‬ ‫ي‬ ‫ي‬ ‫ي‬ ZnS ‫ي‬ ‫ي‬ ‫ي‬ ‫ل‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫يص‬ ‫ي‬ ‫ي‬ ‫عح‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ل‬ ‫ضر‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫يح‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ع‬ ‫ن‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ص‬ ‫ضرد‬ ‫ي‬ ‫ي‬ ‫ي‬ ) ‫ي‬ ‫ي‬ ‫ي‬ ‫ع‬ ‫ض‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫يحر‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ل‬ ‫ضرأ‬ ‫ز‬ ‫ضرأ‬ ‫ن‬ 14 nm ‫ضرص‬ 22 nm ‫ية‬ ‫ي‬ ‫ضردص‬ . ‫يي‬ ‫أح‬ ‫ضر‬ ‫يل‬ ‫ف‬ ‫ضر‬ ‫ل‬ ‫ي‬ ‫ض‬ ‫ي‬ ‫ة‬ ‫ع‬ ‫ل‬ ‫ص‬ ‫ضر‬ ‫ل‬ ‫ضز‬ ‫ليد‬ ‫ي‬ ‫ط‬ ‫ف‬ ‫ضر‬ ‫ي‬ ‫ح‬ ‫ه‬ ، ‫يل‬ ‫يب‬ ‫أ‬ ‫إن‬ ‫ي‬ ‫ي‬ ‫ح‬ ‫ف‬ ‫ي‬ ‫ره‬ ‫ي‬ ‫ضر‬ ‫ي‬ ‫ي‬ ‫ه‬ ‫ي‬ ‫ر‬ ‫ع‬ ‫فل‬ ‫ييص‬ ‫ضرط‬ ‫ن‬ ‫يل‬ ‫ضر‬ ‫ى‬ ‫ضر‬ ‫إرص‬ ‫ث‬ ‫ن‬ 80% . ‫ضر‬ ‫ي‬ ‫ي‬ ‫ي‬ ‫ة‬ ‫ط‬ ‫يية‬ ‫ف‬ ‫يح‬ ‫ضرط‬ ‫ضلع‬ ‫ي‬ ‫ي‬ ‫ن‬ ‫يق‬ 3.62 eV ‫إرص‬ 3.57eV . ‫أحي‬ ‫ضر‬ ‫فل‬ ‫ضر‬ ‫ل‬ ‫ي‬ ‫ض‬ ‫ي‬ ‫ة‬ ‫ع‬ AbstractIn this work, ZnS films were prepared by chemical bath deposition technique where the zinc nitrate salt (Zn(NO 3 ) 2 ) was used as a source of zinc ions(Zn +2 ) and thiourea (SC(NH 2 ) 2 ) as a source of negative sulphide ions(S -2 ). The effect cadmium ion concentration at 0.05 M and 0.1 M on the structural and optical properties is described. Annealing process is carried out in air at temperature 473K for 2h. The structural properties were studied by X-ray diffraction, where found that for ZnS films

Investigation of Boron-Doped CdS Films Deposited by Ultrasonic Spray Pyrolysis Technique

“…Recently, it is reported that the boron-doped CdS samples can be deposited by USP technique using boric acid (H3BO3) as a dopant. It was found that borondoping is an alternative for decreasing the resistivity of CdS films (Ahmed & Dakhel 2012). CdS film is a II-VI compound polycrystalline semiconductor with a direct optical band gap of Eg=2.42 eV at room temperature.…”