2005
DOI: 10.1063/1.1990263
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Effect of ZrO2 incorporation into high dielectric Gd2O3 film grown on Si(111)

Abstract: Gd 2 O 3 films, in which ZrO2 was incorporated, were epitaxially grown on Si(111) using an electron-beam evaporation and effusion method. The crystalline structure and morphological characteristics were investigated by various measurements. A silicide layer was locally formed during the initial growth stage due to interactions between elemental Gd and Si in the Gd2O3 film, resulting in poor interfacial characteristics and extensive destruction of the crystalline structure. However, the incorporation of ZrO2 in… Show more

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Cited by 4 publications
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