Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga₂Te₃ Thin Films

Abstract

A cross‐point array structure is a promising structure in high‐density memory applications. However, a cross‐point array has sneak current paths from selected cells to neighboring unselected cells, and a selector device is required to suppress the sneak current issue. Therefore, the capability of modulating the threshold voltage is one of the essential elements facilitating reliable operation of the cross‐point array structure. Herein, the effect of Zr doping on the threshold switching properties of amorphous Ga2Te3 (a‐Ga2Te3) thin films is investigated with optical and electrical properties and the thermal stability of amorphous phase. Zr‐doped a‐Ga2Te3 thin films increase the threshold and holding voltages with improved thermal stability. Moreover, Zr doping reduces the leakage current of the Ga2Te3 selector device, which is beneficial to implement the cross‐point array of high density. Regarding the endurance, Zr‐doped a‐Ga2Te3 thin films show stable operation until 109 cycles.

Multilevel Memristive GeTe Devices

“…The distribution of the two transition voltages ( V SCL and V TFL ) is shown in Figure 4b. The space charge limited voltage is constant (0.1 V) during sweeping from 3 to 9.5 V, whereas V TFL increases linearly from 0.4 to 0.7 V. A similar increase in V TFL was also observed in nitrogen‐doped a‐Ga 2 Te 3 devices, [ 32 ] suggesting that the increase in the density of localized states is responsible for the increase in the trap‐filled limited voltage.…”

Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays

“…In a one-selector-one resistor (1S1R) structure, the voltage window for the read operation is determined by the set voltage ( V Set ) of the memory and V TH of the selector. Because V Set varies according to the materials used for the memory device, the modulation of V TH is required to facilitate the operation of a 1S1R device [ 17 ]. Moreover, the large difference between V TH and V Hold can alleviate the operational complexity of a CPA structure and relax the stringent voltage-matching requirements [ 18 , 19 ].…”