Effect of zirconium doping on ferroelectric properties and leakage‐current mechanism in Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films

Abstract

Leakage-current mechanism in BLT films after Zr doping was studied as a function of Zr doping. The ferroelectric properties improved with doping. With appropriate Zr-doping concentration, such as x ¼ 0.025, the remnant polarization (2P r ) increases by 36% and saturates afterwards. Different mechanisms for leakage-current conduction were fitted with the observed current density-voltage (J-V) plots, and interplay between the electrode and bulk-limited conduction was sought. Depending upon the field, the importance of a particular chargeconduction mechanism (under the coexistance of multiple mechanisms) was studied. Three different regions, i.e., Ohmic, trap-filled limited, Child's law were explicitly observed in J-V characteristics. Trap density was found to vary with Zr-doping concentration. The measured V TFL was observed to reduce with increase in the temperature. The J-V behavior of BLT and Zr-doped BLT thin films were found to follow Lampert's theory of space-charge-limited conduction in an insulator with traps. The observed increase in low-field insulation was correlated with the space-charge conduction taking into account the modification of dielectric constant with the Zr doping. Like in BLT thin films, the charge transport in Zr-doped BLT thin films is well controlled by the space-charge-limited mechanism.

Electrical studies on Zr-modified Bi3.25La0.75Ti3O12: a promising FRAM ceramic

“…In addition, both A-site (Bi) substitution as well as B-site (V C5 ) substitution affect the oxygen vacancy concentrations and certainly overcome the additional space charges. [8,11] In view of this, and to enhance the ferroelectric properties, the Zr C4 was doped in place of Ti C4 in Bi 3.25 La 0.75 Ti 3 O 12 (BLT).…”

Leakage current behavior of BiFeO3/BiMnO3 multilayer fabricated by pulsed laser deposition

“…In this superlattice BFO and STO, the two neighboring layers having different band gap energies produces a potential barrier at the interlayer interfaces for the conduction electrons and thus reduce the leakage currents [10,11]. Moreover, leakage characteristics are believed to be sensitive to the concentration and distribution of defects as well as the quality of interfaces [12,13]. Recently [14][15][16][17].…”