Effect of wet‐chemical substrate pretreatment on electronic interface properties and recombination losses of a ‐Si:H/c ‐Si and a ‐SiNx:H/c ‐Si hetero‐interfaces

Wünsch, F.; Kunst, M.; Laades, A.; Stürzebecher, Uta; Conrad, E.; Korte, Lars; Schmidt, M.

doi:10.1002/pssc.201000236

Cited by 18 publications

(6 citation statements)

References 10 publications

(17 reference statements)

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“…Some changes in the field‐effect passivation properties have also been reported to occur during post‐deposition heat treatments . Lastly, the need for wafer pre‐cleaning or pre‐conditioning was noted in , and some success has also been achieved using other CVD deposition techniques . Only the work of Koyama et al resulted in very effective passivation using hot‐wire CVD a‐Si/SiN x films, with SRV in the ∼2 cm s −1 range.…”

Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

226

161

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

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Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

226

161

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“…The difference between the passivation obtained on monitor and device wafers and the value mentioned in Section II suggests that this issue is not caused by the a-Si:H layers, as such, but related to the process sequence of the bonded devices. Hence, the influences of critical process steps for aSi:H passivation, i.e., the postbonding cleaning sequence prior to a-Si:H deposition [34] and the damage due to the ITO [35] are investigated in detail.…”

Section: A Cell Characterizationmentioning

confidence: 99%

Heterojunction Interdigitated Back-Contact Solar Cells Fabricated on Wafer Bonded to Glass

Granata¹,

Aleman²,

Bearda³

et al. 2014

IEEE J. Photovoltaics

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Future wafer-based silicon solar cells will be fabricated on thin (<140 μm) wafers. However, technologies to handle thin wafers during cell processing are not yet available for industry. In this paper, a flow to handle thin wafers during rear side cell processing is developed and demonstrated on 4-in 200 μm-thick wafers. The flow involves bonding the wafers to glass after frontside processing followed by a low-temperature p-n heterojunction formation on the rear side. 2.5 × 2.5 cm 2 amorphous/crystalline silicon heterojunction interdigitated back-contact solar cells are fabricated by use of lithography while bonded to glass, and they show an efficiency of up to 17.7%. Shunts, infrared light absorption, and rear side interface passivation are identified as the main efficiency losses. Dedicated experiments suggest that the passivation losses are related to the degradation of the adhesive during wafer cleaning. Hence, methods to improve the compatibility of the adhesive with the cleaning process are discussed. Index Terms-Heterojunction silicon solar cells, interdigitatedback-contact (i-BC), superstrate processing.

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“…27) So, for HPT periods of 1 s and 60 s, we estimate G H about ∼10 17 cm −2 and ∼6 × 10 18 cm −2 , respectively. Thus, N H is considerably higher than the D it , which is about 10 12 cm −2 eV −1 , 28) by few orders of magnitude. The difference between the H concentration supplied to the (p) poly-Si surface and the H atoms contributing to the DB termination is rather large.…”

mentioning

confidence: 85%

Roles of hydrogen atoms in p-type Poly-Si/SiOx passivation layer for crystalline silicon solar cell applications

Lozac’h

Nunomura

Umishio

et al. 2019

Jpn. J. Appl. Phys.

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Cyclic dehydrogenation-rehydrogenation experiments have been performed on p-type poly-Si/SiO x stack to study the roles of hydrogen (H) atoms for crystalline silicon (c-Si) surface passivation. The effective lifetime of minority carriers is enhanced to 1.4 ms by the hydrogenation of hydrogen plasma treatment (HPT) at 300 °C. The dehydrogenation by thermal annealing at 450 °C decreases the lifetime to ∼0.6 ms, which is recovered by a consecutive HPT, underlining the c-Si surface passivation by H atoms diffused into the SiO x /c-Si interface. The lifetime recovery follows a stretched exponential function, indicating the dispersive nature of the p-type poly-Si/SiO x stack. © 2019 The Japan Society of Applied Physics °C under 0.5 Torr with a power density of 60 mW cm −2 . Between each process and characterization step, the samples are kept under vacuum to avoid unintentional oxide growth

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Effect of wet‐chemical substrate pretreatment on electronic interface properties and recombination losses of a ‐Si:H/c ‐Si and a ‐SiN_x:H/c ‐Si hetero‐interfaces

Cited by 18 publications

References 10 publications

Dielectric surface passivation for silicon solar cells: A review

Dielectric surface passivation for silicon solar cells: A review

Heterojunction Interdigitated Back-Contact Solar Cells Fabricated on Wafer Bonded to Glass

Roles of hydrogen atoms in p-type Poly-Si/SiOx passivation layer for crystalline silicon solar cell applications

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