Effect of VLSI interconnect layout on electromigration performance

Atakov, E.M.; Sriram, T. S.; Dunnell, D.; Pizzanello, S.

doi:10.1109/relphy.1998.670668

Cited by 25 publications

(12 citation statements)

References 8 publications

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“…We see that the difference in stress build-up is already apparent in the beginning of electromigration process for these cases. The experimental data that already reported in [2,3,5] have the same conclusion as this work. In literature [3,5], they clearly showed the lifetime prolongation due to the increase the length of reservoirs (or reservoir area).…”

Section: The Reservoir Area Effectsupporting

confidence: 90%

“…As mentioned above, when the reservoir area is increased, the lifetime is prolonged. Experimental data from literature [2,4] show comparable results. However, the question needs to be answered whether the lifetime is increased due to the increase the reservoir area or the increase the number of contacts.…”

mentioning

confidence: 52%

“…vertical and horizontal direction with the same reservoir area, the experimental data from Atakov [2] show that they have the same electromigration lifetime. Another interesting result obtained from our simulation is that the mechanical stress in the reservoir area is homogenous for a long time of electrical current stress as shown in figure 7.…”

mentioning

confidence: 86%

“…In literature [3,5], they clearly showed the lifetime prolongation due to the increase the length of reservoirs (or reservoir area). The work from Atakov [2] showed that the reservoirs in various directions gave almost the same the lifetime. Multiple-VidContacts Effect Figure 3 shows the maximum stress build-up at the right edge of the contact (the contact number 2 in case of figure lf) obtained from simulation structures of la, l e and If.…”

Section: The Reservoir Area Effectmentioning

confidence: 99%

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Modelling of the reservoir effect on electromigration lifetime

Nguyen

Salm

Mouthaan

et al.

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat

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Section: The Reservoir Area Effectsupporting

confidence: 90%

mentioning

confidence: 52%

mentioning

confidence: 86%

Section: The Reservoir Area Effectmentioning

confidence: 99%

See 2 more Smart Citations

Modelling of the reservoir effect on electromigration lifetime

Nguyen

Salm

Mouthaan

et al.

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat

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“…For both AlCu and damascene Cu lines resistance to electromigration starts to increase significantly for lines shorter than 100 µm, and Blech's model suggests that lines shorter than about 50 µm are essentially immune to long term electromigration failure [134][135][136].…”

Section: Electromigrationmentioning

confidence: 99%

Magnetic Random Access Memory for Embedded Computing

Donohoe¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. MRAM_II_2007-Final SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)Air Force Research Laboratory AFRL/RVSE Space Vehicles Directorate 3550 Aberdeen Ave. SE SPONSOR/MONITOR'S REPORTKirtland AFB, NM 87117-5776 NUMBER(S) AFRL-RV-PS-TR-2007-1196 DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. (Clearance #VS07-0688) SUPPLEMENTARY NOTESThis report is published in the interest of scientific and technical information exchange. The established procedures for editing reports were not followed for this technical report. ABSTRACTThe goal of this research was to develop an embedded magnetic memory technology to be integrated into Complementary Metal Oxide Semiconductor (CMOS) integrated circuit fabrication process to provide radiation-hard, logic elements and small random-access memories. The goal is not to provide largescale, bulk memory, but latches and flip flops that serve as state and data registers for sequential logic, and configuration registers for configurable logic. The benefits to spacecraft systems include the ability to power-down a subsystem while retaining system state, thus saving energy until the subsystem is required. The subsystem can then be powered-up and begin operating in milliseconds. The technology is based on a unique, PacMan-shaped magnetic tunneling junction (MTJ) cell developed at the University of Idaho. The focus of this research is to refine the PacMan cell to make it practical for integration into CMOS circuits, to develop CMOS circuits that employ the magnetic cells, and to integrate the cells onto a CMOS process. The process produced two circuit designs based on magnetic memory elements: a magnetic latch, and a magnetic shadow memory to serve as a backup to volatile electronic memory. ii University of Idaho report MRAM_II_2007-Final SUBJECT TERMS CMOS, MTJ Cell

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Effect of current crowding on electromigration lifetime investigated by simulation and experiment

Hieu

Salm

2010

Computational Materials Science

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Effect of VLSI interconnect layout on electromigration performance

Cited by 25 publications

References 8 publications

Modelling of the reservoir effect on electromigration lifetime

Modelling of the reservoir effect on electromigration lifetime

Magnetic Random Access Memory for Embedded Computing

Effect of current crowding on electromigration lifetime investigated by simulation and experiment

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