Effect of vacuum annealing temperature on structural, morphological and optical properties of In2S3:Zn films deposited by spray pyrolysis

Koaib, J.; Bouguila, N.; Kraini, M.; Mhamdi, A.; Halidou, I.; Salem, M. Ben; Bouzouita, H.; Alaya, S.

doi:10.1007/s10854-016-4959-6

Cited by 11 publications

(4 citation statements)

References 34 publications

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“…By increasing the concentration of Cu impurities in In2S3 films, denser films were produced [48]. Moreover, the thickness of the layer was calculated by determining two peaks and selecting the wavelength, its corresponding refractive index and compensation in the relationship (Eq.14) [49]:…”

Section: Uv Vis Spectroscopy Analysismentioning

confidence: 99%

The Synthesis and the effect of Cu on optoelectronic qualities of β-In2S3 as a window layer for CIGS thin film solar cells

Alamoudi¹,

Timoumi

2022

Preprint

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In this paper, the vacuum thermal evaporation technique was used to investigate β-In2S3 doped with copper (Cu) as window layer thin film for solar cells. For various Cu doping levels, the characteristics of the thin films were studied utilizing structural, morphological, and optical characterization techniques, as well as dielectric testing. The research included X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, and energy-dispersive X-ray spectroscopy (EDS), Infrared analysis (FTIR), XPS, Ellipsometry and UV-NIR spectroscopy. The measurements demonstrated that the real and imaginary isolation constants were over the wavelength range and successfully estimated the Urbach energy (Eu) and band gap energy. Moreover, employing the Wemple-Didomenico model helped uncover the Cauchy coefficients’ refractive index and the dispersion and oscillation energies. Therefore, the results presented in this paper show that the use of Cu-In2S3 for perovskite cells offers a high-efficiency alternative in the solar energy field.

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Section: Uv Vis Spectroscopy Analysismentioning

confidence: 99%

The Synthesis and the effect of Cu on optoelectronic qualities of β-In2S3 as a window layer for CIGS thin film solar cells

Alamoudi¹,

Timoumi

2022

Preprint

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“…The obtained values of the crystallite size and the strain are found to be 25 nm and 2.71×10 -3 , respectively. It is noticed that the strain in the film is tensile ( > 0) [23].…”

Section: Structural Analysismentioning

confidence: 99%

Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

Koaib

Bouguila

Kraini

et al. 2021

Preprint

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In2S3 thin films were grown on indium tin oxide (ITO) glass substrate by chemical spray pyrolysis technique at 360°C. The structural analysis of the deposited films shows a combination of tetragonal and cubic structures. The average crystallite size is about 25 nm. The electrical properties of In2S3 thin films have been investigated in a wide frequency (40Hz-100MHz) and temperature (400 K-660 K) ranges.We find that the electrical conductance of the In2S3 thin films is frequency and temperature dependent. The dc conductance shows a semi-conductor behavior for In2S3 films over the explored range of temperature and it follows the Arrhenius law with different activation energies. The variation of ac conductance and the frequency exponent `s’ are explained by the correlated barrier hopping (CBH) model. The Nyquist plots of impedance exhibit semicircle arcs and an electrical equivalent circuit has been suggested to interpret the impedance results.

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“…The b phase exists in a tetragonal structure and it is stable up to 420°C. 5,6 In 2 S 3 is an n-type, nontoxic and diamagnetic material with optical bandgap ranging from 2 eV to 3.91 eV, which enables its ability to act as a window layer in a thin film solar cell. [7][8][9][10] Apart from this, In 2 S 3 finds applications in optoelectronic devices, sensors, photocatalysts and photodetectors.…”

Section: Introductionmentioning

confidence: 99%

“…12,13 Due to these remarkable properties, CNTs have potential applications in areas such as flat displays, gas discharge tubes in telecommunication networks, absorption and screening of electromagnetic waves, energy conversion, fillers or coatings, nanoprobes, supercapacitors, nanoelectronics, flexible electronics, gas sensors, chemical sensors, electrocatalysts, environmental remediation, photocatalysts and photodetectors. [12][13][14][15] In 2 S 3 thin films can be deposited on a glass substrate by various methods such as atomic layer deposition, 16 spray pyrolysis, 2,5,7 successive ionic layer adsorption and reaction, 6,17 sputtering, 18 spin coating 19 and chemical bath deposition (CBD). 1,3,20,21 Here, In 2 S 3 thin films were coated on glass substrate by CBD, in which thin films are deposited on a substrate from the solution.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Characteristics of In2S3-CNT Nanocomposite Thin Films for Photodetector Application

John

Sebastian

Cyriac

et al. 2021

J. Electron. Mater.

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Effect of vacuum annealing temperature on structural, morphological and optical properties of In2S3:Zn films deposited by spray pyrolysis

Cited by 11 publications

References 34 publications

The Synthesis and the effect of Cu on optoelectronic qualities of β-In2S3 as a window layer for CIGS thin film solar cells

The Synthesis and the effect of Cu on optoelectronic qualities of β-In2S3 as a window layer for CIGS thin film solar cells

Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

Optoelectronic Characteristics of In2S3-CNT Nanocomposite Thin Films for Photodetector Application

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