Effect of V/III ratio on the growth of (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si0004.gif" overflow="scroll"><mml:mn>11</mml:mn><mml:mover accent="true"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover><mml:mn>2</mml:mn></mml:math>) AlGaN by metalorganic vapour phase epitaxy

Dinh, Duc V.; Alam, Shahab Norouzian; Parbrook, P. J.

doi:10.1016/j.jcrysgro.2015.11.009

Cited by 24 publications

(17 citation statements)

References 47 publications

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“…For the c -plane and () AlGaN layers studied here, their comparable x AlN is contrary to previous results reported for () vs c -plane layers, where x AlN of () layers was found to be lower (Δ x ≤ 0.1) 32 or higher (Δ x ≤ 0.2) 31 than that of c -plane layers. This might be due to different growth conditions and/or calculation methods used.…”

Section: Discussioncontrasting

confidence: 99%

“…Additionally, it should be noted that these substrates are very small and expensive, and UV-light transparency still remains a challenge 27,28 . Semi- and non-polar AlGaN layers have also been heteroepitaxially grown on sapphire substrates, e.g., a -plane layers on () r -plane sapphire 29 , m -plane 30 and () layers 31,32 on m -plane sapphire.…”

Section: Introductionmentioning

confidence: 99%

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Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Dinh

Honda

et al. 2019

Sci Rep

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Growth of AlxGa1−xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar (3) and (), as well as nonpolar () and () AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.

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Section: Discussioncontrasting

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Dinh

Honda

et al. 2019

Sci Rep

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“…Generally, binary and ternary alloys grown on (11

\overset{2}{true}

2) nitride templates have been found to replicate the undulated surface morphology of the templates, e.g., InGaN/GaN (), InN/GaN (), and AlGaN/AlN (). As previously reported (), the (11

\overset{2}{true}

2) AlN templates exhibit an undulated morphology along [1

\overset{1}{true}

00] as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Polar and semipolar (112) InAlN layers grown on AlN templates using MOVPE

Dinh

Parbrook

2015

Physica Status Solidi (b)

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We report on metalorganic vapor phase epitaxial growth of InAlN layers on (0001) and (11true2‾2) AlN templates at different temperatures (725–800 °C). The indium content (8.0–15.2%) of the (11true2‾2) InAlN layers was found to be lower compared to that for the (0001) layers (9.0–23.0%). The higher indium content of the (0001) layers was attributed to a high density of small hillocks and a larger degree of relaxation. The small hillocks on the (0001) layer surface acted as quantum‐dot‐like structures that caused a stronger emission at longer wavelength compared to weaker emission at shorter wavelength from a “bulk” layer underneath. A large Stokes‐shift of about 300 and 480 meV was observed for the (0001) and (11̅22) layers, respectively. The larger shift of the (11true2‾2) layers was attributed to a higher degree of localization. The larger degree of localization and higher unintentional oxygen incorporation enhanced the luminescence intensity of the (11true2‾2) layers compared to that for the (0001) layers.

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“…Figure 8 plots the calculated Si concentrations against the disilane to group III ratios (Si 2 H 6 /III ratios) (Dinh et al, 2016 a , 2016 b ; Pampili et al, 2018). In MOCVD growth, the group III atoms are introduced via metal precursors in the form of organic compounds such as trimethylgallium and trimethylaluminium, while ammonia is the nitrogen source.…”

Section: Resultsmentioning

confidence: 99%

“…These Al x Ga 1- x N samples included polar-oriented [0001] (samples AP, BP, CP) and semipolar-oriented layers [112-2] (samples ASP, CSP). More details on the growth of the Al x Ga 1– x N:Si layers from the Tyndall Institute are given elsewhere (Li et al, 2013; Dinh et al, 2016 a , 2016 b ; Pampili et al, 2018; Spasevski et al, 2021). Samples labeled TS are Al x Ga 1– x N layers with various AlN contents and crystal polarities grown at Technische Universität Berlin (Knauer et al, 2013; Kusch et al, 2014; Mehnke et al, 2016; Foronda et al, 2020).…”

Section: Methodsmentioning

confidence: 99%

Quantification of Trace-Level Silicon Doping in Al_xGa_1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis

et al. 2021

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Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35–100 ppm [corresponding to (3–9) × 1018 cm−3] in doped Al x Ga1–xN films using an electron probe microanalyser also equipped with a cathodoluminescence (CL) spectrometer. Doping with Si is the usual way to produce the n-type conducting layers that are critical in GaN- and Al x Ga1–xN-based devices such as LEDs and laser diodes. Previously, we have shown excellent agreement for Mg dopant concentrations in p-GaN measured by WDX with values from the more widely used technique of secondary ion mass spectrometry (SIMS). However, a discrepancy between these methods has been reported when quantifying the n-type dopant, silicon. We identify the cause of discrepancy as inherent sample contamination and propose a way to correct this using a calibration relation. This new approach, using a method combining data derived from SIMS measurements on both GaN and Al x Ga1–xN samples, provides the means to measure the Si content in these samples with account taken of variations in the ZAF corrections. This method presents a cost-effective and time-saving way to measure the Si doping and can also benefit from simultaneously measuring other signals, such as CL and electron channeling contrast imaging.

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Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy

Cited by 24 publications

References 47 publications

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Polar and semipolar (112) InAlN layers grown on AlN templates using MOVPE

Quantification of Trace-Level Silicon Doping in Al_xGa_1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis

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Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy

Cited by 24 publications

References 47 publications

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Polar and semipolar (112) InAlN layers grown on AlN templates using MOVPE

Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis

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Product

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Quantification of Trace-Level Silicon Doping in Al_xGa_1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis