Effect of UV illumination on the electrical properties of MOS layer structures

Abstract

An investigation of the effect of UV illumination with relatively high doses on the electrical properties of MOS structures is carried out. It is found that besides negative oxide charge, two kinds of surface states could be created, one of them (S‐II) having anomalous shape of dose dependences (S‐like curves) and specific distribution over the Si band gap. The annealings of the created states allow to determine the activation energies for both kinds of centres. The analysis of the kinetics of this defect formation allows to conclude that for the creation of S‐II (in distinction from S‐I) complicated (multistage) reactions are necessary.

Influence of Radiation on the Luminescence of Silicon Nanocrystals Embedded into SiO2Film

“…The values of and were compared to those for the radiation defects both in the single crystal Si bulk and in the planar Si/SiO 2 systems as well as in the near surface oxidized Si layer [20,[22][23][24][25]. It is well known that the primary radiation defects in silicon crystals have rather small values of the activation energy of annealing (in the case of vacancies, for example, the value of amounts the meanings of 0.18 and 0.33 eV for n-and p-Si, resp.…”

“…Some decades ago the processes of radiation damage creation and elimination in the MOS structures have been studied intensively. In particular, the values of activation energy of annealing both the centers in the oxide and the fast surface states at the Si-SiO 2 interface which were created in the result of different kinds of radiation treatment have been determined [20,24,26]. In all the cases activation energy was distributed along the energy axe with the peak position near 0.9 eV, and the meaning of the frequency factor was 10 7 s −1 .…”

Electric Field Effect on Characteristics of Indium Antimonide MOS Structures

“…But the only amphoteric in the oxide phase composition is just Sb(OH), [12]. The other peak of the SS density is, most probably, related not only to a transformed active surface state that has captured a hydrogen ion [19] but also to the surface destruction (see Fig. 5 ) , since the structural defects of InSb are known to provide a deep donor level with E = E , + 0.11 eV 1221.…”

Proton release and defect creation in MOS structures due to high electric fields

“…These observations have made it possible to assume that corresponding reactions of defect formation should involve hot charge carriers, their heating being provided by the electric field [4, 5, 71. Numerous models of this effect were proposed in which the probability of impact ionization [8], exciton generation [9], plasmon generation followed by production of "anodic species" [5], bond breaking with hydrogen released in atomic form [3] or in the form of protons [lo], has been examined. The latter mechanisms have considered hot carriers as a starting factor, and formation of defects has been assumed to occur with direct participation of other particles ( e g hydrogen).…”