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The influence of doping with TbF3 and subsequent annealing on the properties of vacuum thermally deposited SiOx films is investigated. It is shown that: (i) in spite of the conservation of the amorphous structure and the rather weak dependence of x and the optical characteristics on these factors they influence strongly the secondary ion mass spectra, the conductivity, and other characteristics, which are sensitive to the SiOx matrix microstructure, (ii) there are the initial stages of the phase separation in the films which are suppressed by the doping and promoted by the annealing. A modified random‐bonding model taking into account local x‐fluctuations is considered. This model allows to explain the impurity influence on the Si–O network. The role of the microstructural rearrangements in the susceptibility to the electroluminescence is discussed.

Using photoinjection, C–U and SIMS techniques a comparative study of the creation process of electrically active centers, together with the accompanying variations of impurity structural characteristics of the oxide caused by field treatment of MOS structures, is carried out. It is shown that in structures with the negative charge distributed in the oxide the field treatment results in the creation of interfacial defects and in partial annealing of negatively charged traps. Hydrogen movement from the oxide surface towards the SiSiO2 interface and the appearance of SiOH complexes is observed. A generalized model of Poole‐Frenkel emission of Protons is developed.

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