2006
DOI: 10.1016/j.tsf.2006.04.042
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Effect of tin-doped indium oxide film thickness on the diffusion barrier between silicon and copper

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Cited by 10 publications
(5 citation statements)
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“…Besides observing a sharpening of the peaks in those samples with heat treatment, two smaller peaks around 45° are observed in the high-temperature MF sample. According to the literature, these peaks correspond to the Cu 3 Si intermetallic phase, which is formed due to the interdiffusion of these elements at high temperatures [ 48 , 49 , 50 ]. This observation is in good agreement with the FESEM images of this sample in Figure 6 , where an interaction between copper and silicon can be seen in the cross-section image.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Besides observing a sharpening of the peaks in those samples with heat treatment, two smaller peaks around 45° are observed in the high-temperature MF sample. According to the literature, these peaks correspond to the Cu 3 Si intermetallic phase, which is formed due to the interdiffusion of these elements at high temperatures [ 48 , 49 , 50 ]. This observation is in good agreement with the FESEM images of this sample in Figure 6 , where an interaction between copper and silicon can be seen in the cross-section image.…”
Section: Resultsmentioning
confidence: 99%
“…Likewise, the temperature range in which this barrier is stable will be conditioned by the materials used to create it. Results were reported with the use of alloys with copper and other metals such as aluminium, calcium, or tantalum [ 58 , 59 , 60 , 61 , 62 , 63 ], or with various types of oxides, carbides, or nitrides [ 49 , 64 ]. To work at very high temperatures, high-entropy alloys were also been deposited at the interface of copper with silicon [ 65 ].…”
Section: Resultsmentioning
confidence: 99%
“…Other cost‐effective, but more reflective metals such as Cu are frequently used together with an ITO diffusion barrier in crystalline‐Si solar cells and could possibly enhance the maximum attainable photocurrents to the level of a B II stack with a Au bottom electrode. [ 20–22 ]…”
Section: Resultsmentioning
confidence: 99%
“…The heterojunction structure offers a significant advantage when it comes to copper plating. This advantage arises from the absence of a direct contact between the metal and the silicon, and the presence of transparent conductive oxide (TCO), which is an excellent barrier against copper diffusion [2,3].…”
Section: Introductionmentioning
confidence: 99%