A survey of the effect of cationic, anionic, and nonionic surfactants on the rate and morphological evolution of nickel electrodeposition is presented. Attention is given to the prospect for void-free filling of submicrometer trenches. Cationic species such as polyethyleneimine ͑PEI͒ and cetyl-trimethyl-ammonium ͑CTA + ͒ yield significant inhibition of nickel deposition. For a range of concentrations the single cationic surfactant systems exhibit hysteretic voltammetric curves that, when corrected for ohmic electrolyte losses, reveal an S-shaped negative differential resistance. Void-free bottom-up superconformal feature filling is observed when operating at potentials within the hysteretic regime whereby metal deposition begins preferentially in the most densely patterned regions of the wafer followed by propagation of the growth front laterally across the wafer surface. In contrast, at low overpotentials and concentrations, sulfur-bearing additives such as thiourea ͑TU͒ exert a depolarizing effect on nickel deposition and negligible hysteresis. When PEI and TU are both present, the suppression provided by PEI is diminished and feature filling leads to uniform deposition on the wafer scale. Suitable combinations of PEI and TU enable near void-free filling of Ն230 nm wide trenches with sloping ͑ϳ3.5°͒ sidewalls. Initial conformal growth is followed by geometric leveling once the deposits on the sloping sidewalls meet.One of the challenges in manufacturing three-dimensional ͑3D͒ structures associated with ultralarge-scale integration ͑ULSI͒, microelectromechanical systems ͑MEMS͒, and 3D packaging is achieving void-free filling of trenches and vias. Two different processing schemes known as through-mask plating ͑or LIGA͒ 1 and Damascene processing, 2 respectively, have emerged. In through-mask plating, metal deposition occurs on the exposed areas of an otherwise-blocked electrode. Two manifestations of this are metal plating in nanopores of a metal-backed anodized alumina membrane 3 and selective plating on a metallized substrate patterned with an overlying insulating photoresist. 2 In contrast, the demands of producing multilevel wiring for microelectronic interconnects has spawned the Damascene process whereby a 3D patterned surface is first metallized to ensure conductivity across the entire surface, 2 and void-free bottom-up superconformal filling of the trenches and vias is then accomplished through the effect of competitive adsorption of accelerating and inhibiting electrolyte additives combined with the consequences of area change. 4 The resulting superconformal deposition mode, called "superfilling," has been quantitatively described in terms of a curvature enhanced adsorbate coverage model. Through-mask deposition has been applied to a wide variety of materials ranging from metals to semiconductors, including applications in both passive and active devices. In contrast, the Damascene electrodeposition filling process has been limited to passive metal conductors such as copper, 4 silver 5,6 and gold. 7,8 At...