Effect of Thermal Treatment of Undoped Bi₄Ti₃O₁₂Thin Films Prepared by Metalorganic Chemical Vapor Deposition

Abstract

We study a phenomenological ansatz for merging next-to-next-to-leading order (NNLO) calculations with Monte Carlo event generators. We reweight them to match binintegrated NNLO differential distributions. To test this procedure, we study the Higgs boson production cross-section at the LHC, for which a fully differential partonic NNLO calculation is available. We normalize PYTHIA and MC@NLO Monte Carlo events for Higgs production in the gluon fusion channel to reproduce the bin integrated NNLO double differential distribution in the transverse momentum and rapidity of the Higgs boson. These events are used to compute differential distributions for the photons in the pp → H → γγ decay channel, and are compared to predictions from fixed-order perturbation theory at NNLO. We find agreement between the reweighted generators and the NNLO result in kinematic regions where we expect a good description using fixed-order perturbation theory. Kinematic boundaries where resummation is required are also modeled correctly using this procedure. We then use these events to compute distributions in the pp → H → W + W − → l + l − νν channel, for which an accurate description is needed for measurements at the LHC. We find that the final state lepton distributions obtained from PYTHIA are not significantly changed by the reweighting procedure. -1 -JHEP07(2006)037

Ferroelectric Properties of Bi4Ti3O12 Thin Films Prepared on TiO2 Anatase Layer

“…The pressure in the reaction chamber was fixed at approximately 5 Torr. 12,13) The substrate temperature (T sub ) was varied in the range of 350 C and 500 C. The total thickness of the BIT thin film and buffer layer was fixed at 400 nm. Finally, the top Pt electrodes with a diameter of 0.2 mm were deposited on the film surface through a metal shadow mask by rf-magnetron sputtering in order to measure the electrical properties.…”

“…However, it is difficult to prepare a perfect aaxis-oriented BIT thin film, since interdiffusion occurs between the electrode and poly-Si plug during ferroelectric film formation at high crystallization temperatures. [5][6][7][8][9][10][11][12][13][14][15] The formation process at low temperatures below 500 C is desirable for the realization of poly-Si-plug stacked capacitor memory cells.…”

Structural and Ferroelectric Properties of Bi4Ti3O12/TiO2 Thin Films Prepared by Two-Dimensional RF Magnetron Sputtering

“…Bismuth layer-structured ferroelectrics Bi 4 Ti 3 0 12 (BIT) thin film is expected for application to nonvolatile ferroelectric random access memory (NV -Fe RAM) devices with nondestructive readout operation due to its excellent fatigue endurance when in the deposition of this film with Pt electrode [1][2][3]. In recent years, preparation of BIT thin film has been investigated by several deposition techniques such as sol-gel [ 4,5] , metalorganic decomposition (MOD) [6,7], metalorganic chemical vapor deposition (MOCVD) [8][9][10][11][12][13][14] , and RF magnetron sputtering [I 5-2 I]. From the point of view of commercial production using sol-gel, MOD, and MOCVD methods, there are still some severe difficulties, for instance poor throughput (low deposition rate), high-temperature deposition, compositional nonuniformity across large substrate, rough surface morphology, lack of appropriate precursors in the gas phase, and poor reproducibility.…”

Effect of TiO2 Anatase Layer for Bi4Ti3O12 Thin Film Prepared on La0.05Sr0.95TiO3 Substrate

“…In recent years, Nakamura et al and eo-workers have prepared the BIT thin films with a Ti0 2 anatase layer on the Pt/Ti/Si0 2 /Si substrates by metalorganic chem ical vapor deposition (MOCVD) [13][14][15][16] . The BIT thin film with the Ti0 2 anatase layer exhibited highly a-and b-axes-oriented BIT single phases, although the BIT thin film with no-layer exhibited a c-axis orientation.…”